IXBH42N170

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IXBH42N170

IGBT 1700V 80A TO-247AD

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  • Mfr. Partie #IXBH42N170
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Spécifications

Series BIMOSFET™
Part Status Active
Voltage - Collector Emitter Breakdown (Max) 1700 V
Current - Collector (Ic) (Max) 80 A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 42A
Power - Max 360 W
Input Type Standard
Gate Charge 188 nC
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
Base Product Number IXBH42
Current - Collector Pulsed (Icm) 300 A
Reverse Recovery Time (trr) 1.32 µs

Vue d'ensemble

Description

The IXBH42N170 is a high-performance N-channel MOSFET designed for power applications. It features a low on-resistance (R_DS(on)), which minimizes conduction losses and improves efficiency, making it suitable for use in various circuits, including power supplies and motor drivers. With a maximum drain-source voltage (V_DS) of 170V and a continuous drain current (I_D) rating of 42A, this MOSFET is capable of handling significant power levels.
Its high-speed switching capabilities enable efficient operation in high-frequency applications, reducing heat generation and improving reliability. The IXBH42N170 is housed in a TO-220 package, allowing for efficient thermal dissipation. This device is commonly used in areas such as renewable energy systems, industrial automation, and automotive applications where robust performance is required. Overall, the IXBH42N170 is a versatile component for engineers seeking reliable and efficient power management solutions.

Features

The IXBH42N170 is an N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 170V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain current (I_D) of up to 42A.
3. Low On-Resistance: It offers a low R_DS(on) value, typically around 0.16 ohms, which minimizes conduction losses.
4. Fast Switching Speed: Optimized for fast switching, enhancing efficiency in power applications.
5. Thermal Performance: Supports a wide operating temperature range and has a good thermal resistance, allowing for reliable performance in demanding environments.
6. Package Type: Available in TO-220 or DPAK packages for easy integration into various designs.
These features make the IXBH42N170 ideal for use in power supplies, motor drives, and other demanding electronic applications.

Package

The IXBH42N170 is packaged in a TO-247 style, which is a power package designed for high-voltage applications. It features a robust construction suitable for efficient heat dissipation and is typically used in high-power switching applications.

Pinout

The IXBH42N170 is an N-channel MOSFET with a total of 8 pins. Its primary functions include switching and amplification in power electronic applications. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output terminal where the current flows out.
3. Source (S): The terminal through which current enters the device.
The remaining pins are typically used for heat sinking, ensuring efficient thermal management, and may include additional features depending on the specific package type. This MOSFET is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 170V and continuous drain current capabilities. It is commonly used in power supplies, motor drives, and other high-efficiency switching applications.

Manufacturer

The IXBH42N170 is manufactured by IXYS Corporation, a company known for its semiconductor solutions. IXYS specializes in power semiconductor products, including MOSFETs, IGBTs, and integrated circuits for various applications, such as power management, renewable energy, and industrial automation. Founded in 1983, IXYS has a strong focus on innovation and high-performance devices, catering to markets ranging from automotive to telecommunications. In 2018, IXYS was acquired by Littelfuse, Inc., a global leader in circuit protection and power management solutions. This acquisition has further enhanced IXYS’s capabilities and product offerings within the semiconductor industry.

Application

The IXBH42N170 is an N-channel MOSFET typically used in applications such as power supplies, motor drives, and inverter systems. Its high voltage and current ratings make it suitable for telecom equipment, industrial automation, and renewable energy systems like solar inverters. Additionally, it can be employed in electric vehicles and battery management systems for efficient power conversion and switching.

Equivalent

The IXBH42N170 is a high-voltage, N-channel MOSFET. Equivalent products include the Infineon IRF840, STMicroelectronics STP40NF170, and Vishay Siliconix SIHG40N170. Always verify specifications such as voltage, current rating, RDS(on), and package type to ensure compatibility.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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