IXBF32N300

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IXBF32N300

IGBT 3000V 40A 160W ISOPLUSI4

  • Fabricant
  • Mfr. Partie #IXBF32N300
  • Paquet ISOPLUS i4-3
  • Fiche de données
  • En stock3188

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Spécifications

Package Tube
Series BIMOSFET™
ProductStatus Active
Voltage-CollectorEmitterBreakdown(Max) 3000 V
Current-Collector(Ic)(Max) 40 A
Current-CollectorPulsed(Icm) 250 A
Vce(on)(Max)@VgeIc 3.2V @ 15V, 32A
Power-Max 160 W
InputType Standard
GateCharge 142 nC
ReverseRecoveryTime(trr) 1.5 µs
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case i4-Pac™-5 (3 Leads)

Vue d'ensemble

Description

The IXBF32N300 is a high-performance N-channel MOSFET designed for applications requiring efficient power management. It features a maximum drain-source voltage (V_DS) of 300V and a continuous drain current (I_D) of 32A, making it suitable for use in high-voltage environments such as power inverters, motor drives, and industrial power supplies.
The device is characterized by low on-resistance (R_DS(on)), which reduces power losses and improves thermal performance, contributing to overall system efficiency. The IXBF32N300 also offers fast switching capabilities, allowing for better performance in high-frequency operations.
It comes in various package options, including TO-220 and DPAK, facilitating integration into different circuit designs. The MOSFET is designed to withstand high temperatures and has built-in protection features to enhance reliability in demanding applications. Overall, the IXBF32N300 is ideal for engineers looking for a robust solution in power electronics design.

Features

The IXBF32N300 is a high-performance N-channel MOSFET designed for efficient power management applications. Key features include:
- Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 300V, making it suitable for high-voltage applications.
- Current Handling: It has a continuous drain current (I_D) rating that allows for significant current flow, ideal for power supply and motor control circuits.
- Low On-Resistance (R_DS(on)): This MOSFET features a low on-resistance, which reduces power loss during operation, enhancing overall efficiency.
- Fast Switching Speeds: It offers rapid switching capabilities, making it effective for high-frequency applications.
- Thermal Performance: The device is designed for effective thermal management, allowing it to operate at high temperatures without failure.
- Application Versatility: Commonly used in switch-mode power supplies (SMPS), inverters, and other power electronics.
Overall, the IXBF32N300 is a robust MOSFET that provides high efficiency and reliability for demanding electrical applications.

Package

The IXBF32N300 is typically available in a TO-247 package type, which is a large, robust package designed for high power applications, facilitating effective heat dissipation.

Pinout

The IXBF32N300 is a high-voltage, N-channel MOSFET with a pin count of 8. It is designed for applications requiring high efficiency and fast switching.
Pin Configuration and Functions:
1. Gate (G) - Controls the MOSFET operation; applies voltage to turn the device on/off.
2. Drain (D) - The terminal through which the main current flows out when the device is on.
3. Source (S) - The terminal through which current enters the device when it is on.
4. Gate-Source (G-S) - A control pin; voltage applied here determines the ON/OFF state.
5-8. Additional Pins - Depending on the package type, additional pins may include various source and gate connections or may be part of thermal or mounting features.
The IXBF32N300 is commonly used in power management, motor control, and other high-voltage applications.

Manufacturer

The IXBF32N300 is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS specializes in semiconductor products and technologies, particularly focusing on power management and radio frequency solutions. The company is known for its innovation in high-performance power MOSFETs, IGBTs, and other power devices used in a variety of applications including automotive, industrial, and renewable energy systems. Littelfuse, its parent company, is a global leader in circuit protection, specialty fuses, and semiconductor devices, catering to diverse markets.

Application

The IXBF32N300 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) used in various applications such as industrial motor drives, power inverters, renewable energy systems (like solar inverters), and uninterruptible power supplies (UPS). Its high efficiency and fast switching capabilities make it suitable for energy conversion and control in power electronics systems.

Equivalent

The IXBF32N300 is a silicon carbide (SiC) MOSFET. Equivalent products include:
1. C3M0032120K (Cree/Wolfspeed)
2. SCT32N120 (SCT)
3. MPS320N120 (MPS)
4. STP32N120 (STMicroelectronics)
Always verify specifications and applications to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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