IXA60IF1200NA

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IXA60IF1200NA

IGBT MOD 1200V 88A 290W SOT227B

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Spécifications

Part Status Obsolete
IGBT Type PT
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 88 A
Power - Max 290 W
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Current - Collector Cutoff (Max) 100 µA
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis, Stud Mount
Package / Case SOT-227-4, miniBLOC
Supplier Device Package SOT-227B
Base Product Number IXA60IF1200

Vue d'ensemble

Description

The IXA60IF1200NA is a high-performance insulated gate bipolar transistor (IGBT) designed for use in industrial applications such as motor drives, renewable energy systems, and power supplies. It features a rated voltage of 1200V and a current rating of 60A, making it suitable for high-power applications. The IGBT employs advanced technology to achieve low on-state voltage drop and fast switching speeds, enhancing efficiency and thermal performance.
The IXA60IF1200NA is characterized by its ruggedness and reliability, with a built-in anti-parallel diode for freewheeling applications. Its compact package design allows for efficient thermal management, facilitating easier integration into circuit designs. The device is ideal for demanding environments and can handle high switching frequencies, making it a preferred choice for engineers in the power electronics field. Overall, the IXA60IF1200NA is an essential component for improving energy efficiency and performance in a variety of industrial systems.

Features

The IXA60IF1200NA is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-performance applications. Key features include:
1. Voltage Rating: It has a blocking voltage of 1200V, suitable for various high-voltage applications.
2. Current Rating: Capable of handling up to 60A of continuous current, making it ideal for power electronics.
3. Low Switching Losses: Designed for efficient operation, reducing energy losses during switching.
4. Thermal Performance: Enhanced thermal management allows for better heat dissipation, ensuring reliable operation under load.
5. Short-Circuit Rating: Provides protection against short circuits, increasing system reliability.
6. Compact Design: Its module configuration saves space in power circuits, facilitating easier integration.
7. Applications: Commonly used in industrial drives, renewable energy systems, and motor control applications.
These features make the IXA60IF1200NA a suitable choice for various demanding power electronic applications.

Package

The IXA60IF1200NA is typically available in a TO-247 package type. This package is designed for high-power semiconductor devices, providing excellent thermal management and robust electrical performance.

Pinout

The IXA60IF1200NA is an IGBT module featuring a pin count of 6. The primary function of this module is to serve as a power semiconductor device for high-performance applications, including inverters and motor drives. It is designed to handle high voltage and current, making it suitable for industrial applications requiring efficient power conversion. The module's layout includes pins for gate, collector, and emitter connections, which facilitate the control and switching of electrical power.

Manufacturer

The IXA60IF1200NA is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS specializes in power semiconductors, including integrated circuits and discrete devices used in various applications such as industrial, automotive, telecommunications, and renewable energy. The company focuses on providing solutions for power management, efficiency, and energy conversion. Littelfuse, which acquired IXYS in 2018, is a global leader in circuit protection, providing a wide range of electronic components and solutions to enhance the safety and reliability of electrical systems.

Application

The IXA60IF1200NA is an insulated gate bipolar transistor (IGBT) used primarily in high-efficiency power conversion applications. Its main application areas include renewable energy systems (like solar inverters and wind turbines), industrial motor drives, HVAC systems, and electric vehicle (EV) powertrains. Additionally, it is utilized in induction heating and uninterruptible power supplies (UPS), where efficient switching and thermal management are essential.

Equivalent

The IXA60IF1200NA is an IGBT (Insulated Gate Bipolar Transistor) typically used in power applications. Equivalent products include the Infineon IGBT series like FZ1200R12HE3, the Mitsubishi CM1200DU-24NF, and the ON Semiconductor MBRF30060. Always confirm specifications and ratings to ensure compatibility for your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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3. Transfert bancaire

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