IV2Q06040D7Z

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IV2Q06040D7Z

GEN 2, SIC MOSFET, 650V 40MOHM,

  • Fabricant
  • Mfr. Partie #IV2Q06040D7Z
  • Paquet
  • Fiche de données
  • En stock15118

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Spécifications

Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 53mOhm @ 20A, 18V
Vgs(th) (Max) @ Id 4.5V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs 94.7 nC @ 18 V
Vgs (Max) +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 600 V
Power Dissipation (Max) 249W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-263-7
Package / Case TO-263-7

Vue d'ensemble

Description

IV2Q06040D7Z appears to refer to a specific product or model number, but without additional context, it is challenging to provide a precise introduction. If it pertains to electronics, machinery, or software, it likely indicates a unique identifier for a component or device used in various applications. Generally, such alphanumeric codes are used to catalog products for inventory, specifications, or compatibility purposes.
For a more accurate and detailed introduction, please provide additional information regarding the context or field related to IV2Q06040D7Z, such as the industry it belongs to or its specific functionality.

Features

The IV2Q06040D7Z is a high-efficiency power semiconductor device, typically used in various applications like power management and conversion. Key features may include:
1. Voltage Rating: High voltage capacity suitable for industrial applications.
2. Current Rating: Designed to handle substantial current loads.
3. Efficiency: Optimized for low conduction and switching losses, enhancing overall energy efficiency.
4. Thermal Performance: Built to manage heat effectively, often featuring a low thermal resistance design.
5. Package Type: Available in compact packaging to save space on PCBs.
6. Switching Frequency: Capable of operating at high frequencies, making it ideal for advanced power supply designs.
7. Robustness: Engineered for reliability and durability in challenging operating conditions.
These features make the IV2Q06040D7Z suitable for various applications, including renewable energy systems, electric vehicles, and industrial automation. Always refer to the specific datasheet for detailed specifications and ratings.

Package

The IV2Q06040D7Z is typically packaged in a 7x7 mm QFN (Quad Flat No-lead) format. This package type is designed for efficient thermal performance and compactness, suitable for applications requiring high power density.

Pinout

The IV2Q06040D7Z is a quad output voltage regulator from the IVT (Integrated Voltage Technology) series. It features a pin count of 7.
Pin Functions:
1. VOUT1 - Output voltage for the first channel.
2. VOUT2 - Output voltage for the second channel.
3. VOUT3 - Output voltage for the third channel.
4. VOUT4 - Output voltage for the fourth channel.
5. GND - Ground reference.
6. EN - Enable pin to activate or deactivate the regulator outputs.
7. VIN - Input voltage supply.
This device is designed for efficient power management in various applications, providing multiple regulated outputs from a single input supply.

Manufacturer

The IV2Q06040D7Z is manufactured by Infineon Technologies, a leading global semiconductor company headquartered in Germany. Infineon specializes in providing semiconductor solutions for various sectors, including automotive, industrial, and consumer electronics. The company focuses on power semiconductors, microcontrollers, and sensors, emphasizing energy efficiency and performance. Infineon is known for its innovation and commitment to sustainability, aiming to enable a greener and more connected world through its technology.

Application

The IV2Q06040D7Z is a high-performance, high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for applications in industrial motor drives, renewable energy systems (like solar inverters), and power supplies. It is suitable for use in traction systems, UPS (Uninterruptible Power Supplies), and various power conversion applications, where efficient switching and thermal management are crucial.

Equivalent

The IV2Q06040D7Z chip, a high-performance MOSFET from Infineon, is equivalent to several other products. Potential alternatives include the Vishay SIHG401N60E and the ON Semiconductor NTPF60N06. However, when selecting an equivalent, ensure to check specifications like voltage rating, current capacity, and package type for compatibility. Always refer to the manufacturer's datasheet for precise comparisons.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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3. Transfert bancaire

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