ISL9V3040D3ST

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ISL9V3040D3ST

IGBT 430V 21A TO252AA

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series EcoSPARK®
ProductStatus Active
Voltage-CollectorEmitterBreakdown(Max) 430 V
Current-Collector(Ic)(Max) 21 A
Vce(on)(Max)@VgeIc 1.6V @ 4V, 6A
Power-Max 150 W
InputType Logic
GateCharge 17 nC
Td(on/off)@25°C -/4.8µs
TestCondition 300V, 1kOhm, 5V
OperatingTemperature -40°C ~ 175°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Vue d'ensemble

Description

The ISL9V3040D3ST is a high-performance N-channel MOSFET designed for power management applications. It features a low on-resistance, allowing for efficient switching and reduced power losses. This device is suitable for various applications, including DC-DC converters, power supplies, and motor control systems.
Key specifications typically include a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of around 30A at a specified temperature. The ISL9V3040D3ST is housed in a compact DPAK package, making it ideal for space-constrained designs.
Additionally, it offers fast switching capabilities, which enhance the overall efficiency of power circuits. With its robust thermal performance and reliability, the ISL9V3040D3ST is widely used in consumer electronics, industrial equipment, and automotive applications.
Designers appreciate its ease of integration into various circuits, making it a popular choice in modern electronic designs.

Features

The ISL9V3040D3ST is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: Rated for a maximum drain-source voltage (V_DS) of 40V.
2. Continuous Drain Current: Can handle up to 30A of continuous current, suitable for power management.
3. R_DS(on): Low on-resistance, typically around 9.5 mΩ, which minimizes conduction losses.
4. Gate Threshold Voltage: V_GS(th) ranges from 1V to 2.5V, allowing for efficient switching.
5. Package Type: Available in DPAK package, facilitating thermal performance and easy mounting.
6. Fast Switching Speed: Suitable for high-speed applications, enhancing overall efficiency.
7. Thermal Resistance: Low thermal resistance, promoting better thermal management.
Ideal for applications in power supplies, motor drivers, and DC-DC converters, the ISL9V3040D3ST integrates both performance and reliability, making it a versatile choice for modern electronic designs.

Package

The ISL9V3040D3ST is packaged in a TO-220 form factor. This type of package is designed for high-power applications, providing efficient heat dissipation and ease of mounting on heat sinks.

Pinout

The ISL9V3040D3ST is an N-channel MOSFET with a total of 8 pins. Its primary functions include switching and amplification in various electronic applications, particularly in power management and motor control.
The pin configuration is as follows:
1. Gate - Controls the MOSFET operation.
2. Drain - The terminal through which the current exits.
3. Source - The terminal through which the current enters.
4. Gate - (Another pin for gate function, often used for better drive options.)
5. Drain - (Additional drain pin if applicable in certain configurations.)
6. Source - (Another source pin for configurations.)
7. Drain - (More drain pins for parallel connections.)
8. Source - (Another source pin for parallel configurations.)
This MOSFET supports high efficiency and fast switching, making it suitable for applications like power supplies and converters. Always refer to the manufacturer's datasheet for detailed specifications and configurations.

Manufacturer

The ISL9V3040D3ST is manufactured by Renesas Electronics Corporation. Renesas is a global semiconductor company specializing in microcontrollers, analog, power, and system-on-chip (SoC) solutions. The company serves a wide range of industries, including automotive, industrial, and consumer electronics. Renesas focuses on delivering innovative solutions tailored to meet the demands of applications in embedded systems, automotive technology, and IoT (Internet of Things). With a strong emphasis on research and development, Renesas aims to enhance product performance and energy efficiency, making it a key player in the semiconductor market.

Application

The ISL9V3040D3ST is a high-performance N-channel MOSFET primarily used in applications such as power management, DC-DC converters, battery management systems, motor control, and high-speed switching. Its low on-resistance and fast switching capabilities make it suitable for use in consumer electronics, automotive systems, renewable energy systems, and industrial equipment.

Equivalent

The ISL9V3040D3ST chip is a N-channel MOSFET. Equivalent products include parts such as the IRF3040, STP3040, and FQP30N40. When seeking alternatives, ensure they match in key specifications like voltage, current rating, and package type. Always verify specific application requirements for compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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