IS46LQ32256EA-062B2LA3

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IS46LQ32256EA-062B2LA3

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Spécifications

EU RoHS Compliant
ECCN (US) EAR99
Part Status Active
HTS 8542.32.00.36
Automotive Yes
PPAP Yes
Chip Density (bit) 8G
Number of Bits/Word (bit) 32
Interface Type LVSTL
Minimum Operating Supply Voltage (V) 1.06|1.7
Typical Operating Supply Voltage (V) 1.1|1.8
Maximum Operating Supply Voltage (V) 1.17|1.95
Operating Current (mA) 660
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 125
Mounting Surface Mount
Package Height 0.8(Max)
Package Width 10
Package Length 14.5
PCB changed 200
Standard Package Name BGA
Supplier Package TFBGA
Pin Count 200
DRAM Type Mobile LPDDR4 SDRAM
Organization 256Mx32
Number of Internal Banks 16
Number of Words per Bank 16M
Data Bus Width (bit) 32
Maximum Clock Rate (MHz) 3200
Maximum Access Time (ns) 3.6
Address Bus Width (bit) 36
Number of I/O Lines (bit) 32
Supplier Temperature Grade Automotive
Process Technology CMOS

Vue d'ensemble

Description

The IS46LQ32256EA-062B2LA3 is a high-performance DRAM (Dynamic Random Access Memory) chip designed for various applications, including consumer electronics, computing, and mobile devices. It belongs to the 256Mb (megabit) family of memory solutions and operates with a wide range of data bus widths and configurations. This specific model typically features a 3.3V supply voltage, which is common for SDRAM.
Key characteristics include a fast access time, low power consumption, and support for burst mode operations, enhancing data transfer speeds. The chip is commonly used in systems requiring efficient memory management for improved performance. The '062B2' in the part number indicates specific design and manufacturing variations, while 'LA3' refers to packaging and temperature specifications.
Overall, the IS46LQ32256EA-062B2LA3 provides robust performance for modern electronic devices, making it a suitable choice for manufacturers looking to enhance the memory capabilities of their products.

Features

The IS46LQ32256EA-062B2LA3 is a 32Mb (4MB) SRAM (Static Random Access Memory) chip designed for high-performance applications. Key features include:
1. Organization: It is organized as 4M x 8 bits, enabling efficient data handling.
2. Speed: The device operates at a maximum access time of 62 ns, ensuring fast data retrieval.
3. Power Supply: It typically operates at a voltage of 2.7V to 3.6V, making it suitable for low-power applications.
4. Temperature Range: The chip is designed to function effectively within a wide temperature range, typically from -40°C to +85°C.
5. Interface: It supports a simple parallel interface, which allows for easy integration into various systems.
6. Packaging: It comes in a compact package, facilitating space-saving designs in electronic circuits.
These features make the IS46LQ32256EA-062B2LA3 ideal for applications in telecommunications, networking, and consumer electronics where reliable and fast memory is essential.

Package

The IS46LQ32256EA-062B2LA3 is packaged in a 54-ball FBGA (Fine-Pitch Ball Grid Array) format. This package type is designed for high-density memory applications, providing efficient space utilization and improved thermal performance.

Pinout

The IS46LQ32256EA-062B2LA3 is a 32Mb (4MB x 8) asynchronous SRAM device. It features a 28-pin TSOP-II package.
Key functions of the pins include:
1. Data Pins (DQ0-DQ7): 8 data lines for input and output.
2. Address Pins (A0-A18): 19 address lines to select memory locations.
3. Chip Enable (CE): Activates the memory device.
4. Output Enable (OE): Enables data output when low.
5. Write Enable (WE): Controls write operations.
6. Byte Select (LB, UB): Selects lower or upper byte during operations.
7. Ground (VSS): Common ground reference.
8. Power Supply (VCC): Power supply for the device.
This SRAM is suitable for applications requiring high-speed memory access with low latency.

Manufacturer

The IS46LQ32256EA-062B2LA3 is manufactured by Integrated Silicon Solution, Inc. (ISSI). ISSI is a semiconductor company that specializes in designing and manufacturing a variety of memory and analog products, including DRAM, SRAM, and Flash memory. The company serves various markets, including telecommunications, consumer electronics, automotive, and industrial applications. Established in 1988, ISSI is known for its focus on high-quality memory solutions and has a global presence with operations in North America, Asia, and Europe.

Application

The IS46LQ32256EA-062B2LA3 is a 256 Mb (32MB) DDR3 SDRAM memory chip. Its application areas include high-performance computing, networking equipment, telecommunications, consumer electronics, and embedded systems. It's suitable for use in servers, desktop computers, laptops, and various industrial applications where high-speed data processing and efficient memory management are required.

Equivalent

The IS46LQ32256EA-062B2LA3 is a 256Mb (32MB) DDR3 SDRAM chip. Equivalent products include:
1. MT41K256M16HA-125
2. MT41K256M16HA-107
3. H5TQ4G83CFR-PBA
4. K4B4G1646F-BCMA
Always verify specifications like speed, voltage, and package type before substituting.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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