IS43TR16640C-125JBLI

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IS43TR16640C-125JBLI

IC DRAM 1GBIT PARALLEL 96TWBGA

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  • Mfr. Partie #IS43TR16640C-125JBLI
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Spécifications

Part Status Active
Base Product Number IS43TR16640
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3
Memory Size 1Gbit
Memory Organization 64M x 16
Memory Interface Parallel
Clock Frequency 800 MHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.425V ~ 1.575V
Operating Temperature -40°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 96-TFBGA
Supplier Device Package 96-TWBGA (9x13)
Packaging Tray
Access Time 20 ns

Vue d'ensemble

Description

The IS43TR16640C-125JBLI is a high-performance, low-power dynamic random-access memory (DRAM) device produced by Integrated Silicon Solution, Inc. (ISSI). It is specifically designed for various applications requiring efficient memory solutions, such as consumer electronics, automotive systems, and industrial devices.
Key features include a 16-bit wide data bus, a density of 64 Megabits (8 Megabytes), and a fast access time of 125 ns, making it suitable for high-speed data processing. It operates on a 3.3V power supply, ensuring low power consumption, which is crucial for battery-operated devices.
The device supports a synchronous interface, allowing for high data transfer rates and efficient memory access patterns. It also includes features like burst modes and easy integration into existing systems.
Overall, the IS43TR16640C-125JBLI is ideal for applications that demand both speed and energy efficiency, making it a versatile choice for modern memory needs.

Features

The IS43TR16640C-125JBLI is a 64Mb (8MB) DRAM memory chip featuring a synchronous dynamic random-access memory (SDRAM) architecture. Key features include:
1. Organization: It is organized as 4 Meg x 16 bits.
2. Speed: Operates at a clock frequency of up to 125 MHz, supporting data rates of 1.0 Gbps.
3. Voltage: It typically operates at a voltage of 2.5V, ensuring low power consumption.
4. Package: Available in a 54-ball BGA (Ball Grid Array) package, suitable for compact designs.
5. Access Time: Offers low latency with access times around 5 ns.
6. Burst Mode: Supports burst read and write operations for improved performance in data-intensive applications.
7. Temperature Range: Designed to operate within an extended temperature range, suitable for various industrial applications.
This chip is ideal for high-performance computing, telecommunications, and consumer electronics applications requiring efficient memory solutions.

Package

The IS43TR16640C-125JBLI is typically packaged in a 60-ball TFBGA (Thin Fine-pitch Ball Grid Array) package.

Pinout

The IS43TR16640C-125JBLI is a 64Mb (8MB) synchronous dynamic random-access memory (SDRAM) device. It features a total of 54 pins. The primary functions of the pins include data input/output, address input, control signals, and power supply connections.
Key pin functions include:
- DQ0-DQ7: Data input/output pins for data communication.
- A0-A11: Address input pins for selecting memory locations.
- CLK: Clock input pin for timing control.
- CS: Chip select pin to enable the device.
- WE: Write enable pin for initiating write operations.
- OE: Output enable pin for controlling data output.
- RAS: Row address strobe for row selection.
- CAS: Column address strobe for column selection.
- VDD/VSS: Power supply and ground pins.
This device operates at a speed of 125 MHz and is designed for high-performance applications.

Manufacturer

The IS43TR16640C-125JBLI is manufactured by ISSI (Integrated Silicon Solution, Inc.), which is a semiconductor company. ISSI specializes in the design, manufacturing, and marketing of high-performance memory and analog products. The company provides a range of semiconductor solutions, including DRAM, SRAM, and Flash memory, catering to various applications in consumer electronics, automotive, industrial, and telecommunications markets. Founded in 1988, ISSI is known for its focus on innovation and quality in memory technologies.

Application

The IS43TR16640C-125JBLI is a 64Mb DDR3 SDRAM memory chip, commonly used in applications such as high-performance computing, networking equipment, consumer electronics, and automotive systems. Its features support data-intensive tasks like multimedia processing, gaming, and embedded systems, making it suitable for applications requiring high speed and efficiency in memory storage and retrieval.

Equivalent

The IS43TR16640C-125JBLI is a 4M x 16-bit, DDR SDRAM memory chip. Equivalent products include:
1. MT46V64M16-6
2. K4S641632H-6
3. Hynix HY57V641620CTP-6
4. Samsung K4S641632H-6
Ensure compatibility with specifications such as voltage, speed, and pin configuration when selecting alternatives.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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