IS43TR16256BL-107MBLI

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IS43TR16256BL-107MBLI

IC DRAM 4GBIT PAR 96TWBGA

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  • Mfr. Partie #IS43TR16256BL-107MBLI
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Spécifications

Part Status Active
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3L
Memory Size 4Gbit
Memory Organization 256M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.283V ~ 1.45V
Operating Temperature -40°C ~ 95°C (TC)
Mounting Type Surface Mount
Package / Case 96-TFBGA
Supplier Device Package 96-TWBGA (9x13)
Base Product Number IS43TR16256
Clock Frequency 933 MHz
Access Time 20 ns

Vue d'ensemble

Description

The IS43TR16256BL-107MBLI is a high-performance DRAM chip designed for use in various electronic applications, particularly in computing and networking devices. It belongs to the family of DDR (Double Data Rate) SDRAM, specifically designed for low-power consumption, making it suitable for mobile and battery-operated devices.
This specific model features a 16Mb x 16bit configuration, resulting in a total memory capacity of 256 Megabits. With a clock speed of 107 MHz, it provides efficient data processing and transfer rates. The chip is designed with a synchronous interface, allowing for faster access times and improved performance compared to asynchronous DRAMs.
The IS43TR16256BL-107MBLI also incorporates various power-saving features, which help extend battery life in portable applications. Its compact size and reliable performance make it an ideal choice for manufacturers looking to enhance the functionality of their devices. For more detailed specifications, refer to the manufacturer's datasheet.

Features

The IS43TR16256BL-107MBLI is a 256Mb (32MB) DRAM chip produced by ISSI (Integrated Silicon Solution, Inc.). It features:
1. Type: DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory).
2. Organization: 16-bit wide data bus with a configuration of 256M x 16.
3. Speed: Operates at a clock frequency of 800 MHz, with a data transfer rate of 1600 MT/s (Megatransfers per second).
4. Voltage: Operates at a low voltage of 1.5V, enhancing power efficiency.
5. Memory Architecture: It utilizes a synchronous interface for faster data access and efficiency.
6. Package: Typically available in a standard 78-ball TFBGA (Thin Fine Ball Grid Array) package.
7. Features: Supports various memory modes including burst mode, and includes a self-refresh feature for power savings.
This DRAM is commonly used in applications such as consumer electronics, networking equipment, and embedded systems where high performance and low power consumption are essential.

Package

The IS43TR16256BL-107MBLI is packaged in a 54-ball TFBGA (Thin Fine Ball Grid Array) format.

Pinout

The IS43TR16256BL-107MBLI is a DDR3 SDRAM memory chip with a pin count of 78. It is designed for high-speed memory applications and features a 2-bit wide configuration for data input/output.
Its primary functions include providing dynamic random access memory for various applications, including computing and networking devices. The chip supports a data rate of 1066 MT/s with a voltage supply of 1.5V, making it suitable for modern electronic systems.
Key functionalities include read and write operations, burst mode access, and support for multiple banks to facilitate efficient data processing. The device is commonly used in applications requiring high performance and efficiency, such as in mobile devices, servers, and embedded systems.

Manufacturer

The IS43TR16256BL-107MBLI is manufactured by Integrated Silicon Solution, Inc. (ISSI), a company that specializes in the design and production of high-performance semiconductor solutions. ISSI primarily focuses on memory devices, including SRAM, DRAM, and flash memory products, serving a variety of markets such as consumer electronics, automotive, industrial, and telecommunications. Founded in 1988, the company is known for its innovation in memory technology and works to provide high-quality, reliable products tailored to meet the needs of its customers.

Application

The IS43TR16256BL-107MBLI is a DRAM memory chip commonly used in applications such as consumer electronics, computer systems, networking equipment, and industrial automation. It serves as high-speed memory for devices needing efficient data storage and retrieval, including laptops, desktops, and servers. Additionally, it can be utilized in telecommunications and automotive electronics where reliable memory performance is crucial.

Equivalent

The IS43TR16256BL-107MBLI is a 16Mb (2M x 8) DDR3 SDRAM memory chip. Equivalent products include:
1. IS43TR16256BL-106MBLI
2. IS43TR16256BLL-107MBLI
3. MT41J128M16HA-107
4. H5TQ2G63AFR-107
5. D9QNM-16M
Ensure to check specifications for compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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