IS43DR16640C-25DBL

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IS43DR16640C-25DBL

IC DRAM 1GBIT PARALLEL 84TWBGA

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Spécifications

Package Tray
ProductStatus Active
MemoryType Volatile
MemoryFormat DRAM
Technology SDRAM - DDR2
MemorySize 1Gb (64M x 16)
MemoryInterface Parallel
ClockFrequency 400 MHz
WriteCycleTime-WordPage 15ns
AccessTime 400 ps
Voltage-Supply 1.7V ~ 1.9V
OperatingTemperature 0°C ~ 85°C (TC)
MountingType Surface Mount
Package/Case 84-TFBGA

Vue d'ensemble

Description

The IS43DR16640C-25DBL is a high-performance 64Mb DRAM (Dynamic Random Access Memory) chip produced by Integrated Silicon Solution, Inc. It is designed for applications requiring fast data access and efficient power consumption.
Key features include:
- Organization: 64 Meg x 4 bits, allowing it to store significant amounts of data.
- Speed: Operates at a clock frequency of 25 MHz, suitable for various embedded systems and consumer electronics.
- Low Power Consumption: Designed for energy efficiency, making it ideal for battery-operated devices.
- Interface: It employs a synchronous interface, which enhances performance through intelligent timing control.
This DRAM is commonly used in applications such as networking equipment, portable devices, and other systems that demand reliable memory performance. Overall, the IS43DR16640C-25DBL is a versatile memory solution that balances speed, capacity, and power efficiency.

Features

The IS43DR16640C-25DBL is a DDR3 SDRAM memory module with the following key features:
1. Capacity: 64 Megabits (8 Megabytes) per chip, with configurations available for larger memory modules.
2. Data Rate: Operates at 800 MT/s (Mega Transfers per second).
3. Speed: It has a speed grade of 25 nanoseconds, indicating its access timing characteristics.
4. Architecture: It utilizes a synchronous dynamic RAM (SDRAM) architecture, allowing for efficient burst data transfers.
5. Interface: Supports a 16-bit data bus width, which is standard for DDR3 interfaces.
6. Voltage: Operates at a low voltage of 1.5V, enhancing power efficiency.
7. Package: Typically available in a 54-ball FBGA (Fine Ball Grid Array) package, facilitating compact designs.
8. Compatibility: Designed for use in a variety of applications, including consumer electronics, networking, and industrial systems.
These features make the IS43DR16640C-25DBL suitable for high-performance computing applications.

Package

The IS43DR16640C-25DBL is packaged in a 54-ball TFBGA (Thin Fine Ball Grid Array) format. This type of package is designed for compact applications, providing a low-profile and efficient footprint for high-density memory devices.

Pinout

The IS43DR16640C-25DBL is a 64Mb (8M x 8) DDR SDRAM device with a pin count of 54 pins. This memory chip operates at a 2.5V power supply voltage and is designed for high-speed operations, featuring a 25 ns cycle time.
Key functions of the IS43DR16640C-25DBL include:
1. Memory Storage: It provides dynamic random access memory for temporary data storage in computing applications.
2. Data Bus: It supports an 8-bit wide data bus for data transfer.
3. Input/Output: Pins are allocated for data input/output, address input, control signals (like RAS, CAS, WE), and clock signals.
4. Burst Read and Write: The device supports burst mode operations, allowing efficient data access patterns.
This memory chip is suitable for use in various applications, including consumer electronics, networking, and industrial systems.

Manufacturer

The IS43DR16640C-25DBL is manufactured by Integrated Silicon Solution Inc. (ISSI). ISSI is a semiconductor company that specializes in the design and manufacturing of high-performance memory products. Their product portfolio includes SRAM, DRAM, and flash memory devices, catering to a wide range of applications such as automotive, consumer electronics, telecommunications, and industrial markets. Founded in 1988, ISSI is known for its innovative memory solutions and has established a reputation for quality and reliability in the semiconductor industry.

Application

The IS43DR16640C-25DBL is a 64Mb DDR SDRAM memory chip used in various applications, including high-performance computing, telecommunications, networking equipment, and consumer electronics. It is suitable for use in graphics applications, mobile devices, and embedded systems where high-speed data processing and storage are required. Its low power consumption makes it ideal for battery-operated devices.

Equivalent

The IS43DR16640C-25DBL is a 64Mb DDR SDRAM memory chip. Equivalent products include:
1. MT46V64M16P-25
2. Hynix HY57V641620H
3. Samsung K4S641632H
4. Micron MT46V64M16P-25
Ensure compatibility with voltage, timing, and pin configurations when selecting alternatives.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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