IS43DR16320E-25DBLI

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IS43DR16320E-25DBLI

IC DRAM 512MBIT PAR 84TWBGA

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  • Mfr. Partie #IS43DR16320E-25DBLI
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  • En stock5366

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Spécifications

Part Status Active
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Size 512Mbit
Memory Organization 32M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 84-TFBGA
Supplier Device Package 84-TWBGA (8x12.5)
Base Product Number IS43DR16320
Clock Frequency 400 MHz
Access Time 400 ps

Vue d'ensemble

Description

The IS43DR16320E-25DBLI is a high-performance DRAM (Dynamic Random Access Memory) component designed for various electronic applications. It features a 16 Meg x 32 configuration, providing a total memory capacity of 512 Megabits. Operating at a clock frequency of 200 MHz, it supports a data rate of up to 400 Mbps, making it suitable for demanding applications such as networking, gaming, and high-speed data processing.
This DRAM is built using advanced 25nm technology, which enhances its efficiency and performance while reducing power consumption. It operates on a 3.3V power supply and includes features like a burst mode for improved data transfer rates. The “-BLI” suffix typically indicates a specific package type or grade, often denoting a lead-free, environmentally friendly option.
The IS43DR16320E-25DBLI is ideal for embedded systems and applications requiring reliable, high-speed memory, making it a popular choice among engineers and designers in the electronics industry.

Features

The IS43DR16320E-25DBLI is a 2GB DDR3 SDRAM memory chip designed for high-performance applications. Here are its key features:
1. Memory Type: DDR3 SDRAM
2. Capacity: 2 Gigabits (GB)
3. Configuration: 1 x 16 bits
4. Speed: Operates at a data rate of up to 1600 MT/s (Mega Transfers per second)
5. Voltage: Operates at a core voltage of 1.5V, with support for 1.35V for low-power applications.
6. Package: 78-ball FBGA (Fine Ball Grid Array), making it suitable for compact designs.
7. Timing: CL=25 for improved efficiency in data access times.
8. Features: Supports burst lengths of 4 and 8, along with an asynchronous reset for enhanced flexibility.
9. Applications: Ideal for use in various computing devices, including laptops, desktops, and other embedded systems.
This chip effectively balances performance, power consumption, and form factor, making it a solid choice for modern memory needs.

Package

The IS43DR16320E-25DBLI is packaged in a 78-ball TFBGA (Thin Fine Pitch Ball Grid Array) format. This package type allows for a compact design and efficient thermal dissipation, suitable for various applications in memory modules.

Pinout

The IS43DR16320E-25DBLI is a 1 Gigabit (128MB) DRAM device organized as 16 bits x 8 banks. It features a total of 54 pins. The primary functions of its pins include:
1. Data Pins (DQ0-DQ15): These are used for data input and output.
2. Address Pins (A0-A12): These are used to select memory locations.
3. Control Pins (CS, RAS, CAS, WE): Control signals for enabling the chip, row address strobe, column address strobe, and write enable.
4. Clock Pins (CLK, CLK#): Used for synchronizing data transfers.
5. Power Pins (VDD, VSS): Provide power supply and ground.
6. Chip Select Pins (CS): Used for chip enable/disable functionality.
7. Byte Enable Pins (BYTE): Allow control over data access in byte format.
This DRAM operates with a 25 ns access time and is designed for high-performance applications.

Manufacturer

The manufacturer of the IS43DR16320E-25DBLI is ISSI, or Integrated Silicon Solution, Inc. ISSI is a semiconductor company that specializes in the design and manufacture of high-performance memory products, including DRAM (Dynamic Random-Access Memory) and Flash memory. Founded in 1988 and headquartered in San Jose, California, ISSI serves a variety of markets, including telecommunications, automotive, industrial, and consumer electronics. The company is known for its innovative memory solutions and has a significant presence in the global semiconductor industry.

Application

The IS43DR16320E-25DBLI is a 2Gb DDR3 SDRAM memory chip used in various applications, including consumer electronics, telecommunications, networking equipment, and automotive systems. Its high-speed performance and low power consumption make it suitable for laptops, desktops, servers, and embedded systems in industrial applications.

Equivalent

The IS43DR16320E-25DBLI is a 2Gb DDR3 SDRAM chip. Equivalent products include:
1. Hynix H5TQ2G63AFR
2. Micron MT41J128M16HA
3. Samsung K4B4G1646D
4. Nanya NT5CB256M16DP
Ensure to verify specifications like speed, package type, and voltage before substituting.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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