IS43DR16128-3DBLI

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IS43DR16128-3DBLI

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Spécifications

Brand ISSI
Mounting Style SMD/SMT
Package / Case BGA-84
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Packaging Tray
Product Type DRAM
Series IS43DR16128
Factory Pack Quantity:Factory Pack Quantity 162
Subcategory Memory & Data Storage
Type SDRAM - DDR2
Moisture Sensitive Yes
Shipping Restrictions Mouser does not presently sell this product in your region.
Data Bus Width 16 bit
Memory Size 2 Gbit
Maximum Clock Frequency 333 MHz
Supply Voltage - Min 1.7 V
Supply Voltage - Max 1.9 V
Organization 128 M x 16
Access Time 450 ps
Supply Current - Max 150 mA

Vue d'ensemble

Description

The IS43DR16128-3DBLI is a high-performance DRAM memory chip manufactured by Integrated Silicon Solution, Inc. (ISSI). It is a 1Gb (Gigabit) DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) device, organized as 128 Meg x 8 bits. This chip operates at a data rate of 1600 Mbps and is designed for applications requiring high-speed data processing, such as networking, consumer electronics, and computing systems.
Key features of the IS43DR16128-3DBLI include a low-voltage operation of 1.5V (±0.1V), a 1K refresh cycle, and a variety of package options for flexibility in design. It supports various burst lengths, enhancing its performance in data-intensive applications. The chip is ideal for use in systems that require efficient memory solutions, balancing speed and power consumption.
Overall, the IS43DR16128-3DBLI is a reliable choice for modern electronics, catering to the growing demand for faster and more efficient memory modules.

Features

The IS43DR16128-3DBLI is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip designed for high-performance memory applications. It features a 1 gigabit (128MB) capacity, organized as 128M x 8 bits. Key specifications include:
- Data Rate: Supports data rates up to 1600 MT/s, enhancing overall system performance.
- Voltage: Operates at a core voltage of 1.5V, which is standard for DDR3, providing a balance between performance and power efficiency.
- Package Type: Offered in a 78-ball FBGA (Fine Ball Grid Array) package, which allows for a compact design suitable for various applications.
- Latency: Offers low latency, enabling faster access times and improved data processing speeds.
- Operating Temperature: Designed for commercial temperature range applications, typically from 0°C to 85°C.
This memory chip is ideal for use in various computing applications, including desktops, laptops, and embedded systems, providing reliable performance for both consumer and industrial uses.

Package

The IS43DR16128-3DBLI is a DDR3 SDRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This type of packaging provides a compact layout suitable for high-density applications, enhancing performance and reducing board space usage.

Pinout

The IS43DR16128-3DBLI is a 1 Gigabit (128MB) DDR3 SDRAM device organized as 1x16 (1 bank of 16 bits). It features a total of 78 pins.
The primary functions of these pins include:
- Address Inputs (A0-A13): Used to select memory locations.
- Data I/O Pins (DQ0-DQ15): Bi-directional data pins for data transfer.
- Command Inputs (CK, CK#, CS#, RAS#, CAS#, WE#): Control inputs for read, write, and refresh operations.
- Chip Select (CS#): Activates the device for communication.
- Byte Enables (BA0, BA1): Selects the bank being accessed.
- Other Control Pins (RESET#, DQS, DQS#): Used for signal synchronization and initialization.
This device operates at a voltage of 1.5V and supports data rates up to DDR3-1600, making it suitable for various applications where high-speed memory is required.

Manufacturer

The IS43DR16128-3DBLI is manufactured by ISSI (Integrated Silicon Solution, Inc.), a company specializing in the design and production of high-performance semiconductor solutions. ISSI focuses on memory products, including DRAM, SRAM, and flash memory, catering to various applications such as automotive, consumer electronics, networking, and industrial systems. Founded in 1988 and headquartered in San Jose, California, ISSI has established itself as a key player in the semiconductor industry, providing innovative solutions to meet the evolving needs of its customers.

Application

The IS43DR16128-3DBLI is a 128Mb DDR SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) primarily used in applications such as telecommunications, networking devices, consumer electronics, and industrial systems. It is suitable for high-performance computing tasks, data buffering, and graphics processing in devices like smartphones, tablets, and embedded systems due to its fast data access speeds and efficiency.

Equivalent

The IS43DR16128-3DBLI chip is a 1Gb DDR3 SDRAM memory chip. Equivalent products include:
1. MT41J128M16HA-15E
2. Hynix H5TQ2G63AFR
3. Nanya NT5CB256M16DP-15
These alternatives may vary slightly in specifications such as speed and power consumption, so it's essential to verify compatibility with your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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