IS42S16160J-7BL

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IS42S16160J-7BL

IC DRAM 256MBIT PAR 54TFBGA

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  • Mfr. Partie #IS42S16160J-7BL
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Spécifications

Part Status Active
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM
Memory Size 256Mbit
Memory Organization 16M x 16
Memory Interface Parallel
Clock Frequency 143 MHz
Access Time 5.4 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 54-TFBGA
Supplier Device Package 54-TFBGA (8x8)
Base Product Number IS42S16160

Vue d'ensemble

Description

The IS42S16160J-7BL is a 1Gb DDR2 SDRAM (Synchronous Dynamic Random Access Memory) chip designed for high-performance applications. It features a 16-bit data width and operates at a maximum clock frequency of 400 MHz, providing a data transfer rate of up to 800 MT/s (million transfers per second). The device is built using a 90nm process technology and comes in a BGA (Ball Grid Array) package for efficient thermal management and compact design.
Key specifications include a voltage supply of 1.8V, with low power consumption making it suitable for mobile and embedded applications. It supports various operating modes, including burst read and write operations to enhance performance. The IS42S16160J-7BL is often used in consumer electronics, networking equipment, and other devices requiring fast memory solutions. Its reliability and speed make it an ideal choice for both industrial and commercial applications.

Features

The IS42S16160J-7BL is a DRAM component featuring a 16 Meg x 16 bit architecture, designed for high-performance applications. Key features include:
1. Memory Type: Asynchronous DRAM (Dynamic Random Access Memory).
2. Organization: 16 Mbit density organized as 1M × 16 bits.
3. Speed Grade: 7 ns access time for efficient data retrieval.
4. Voltage Supply: Operates on a standard 3.3V supply.
5. Temperature Range: Industrial temperature range (-40°C to +85°C).
6. Package Type: Available in a 54-pin TSOP II (Thin Small Outline Package) for space-saving designs.
7. Functionality: Supports burst mode and random access for flexible performance in various applications.
8. Applications: Ideal for networking equipment, telecommunications, and industrial devices requiring reliable memory solutions.
This chip is well-suited for applications requiring stable performance and data integrity under varying conditions.

Package

The IS42S16160J-7BL is packaged in a standard 54-ball TSOP II (Thin Small Outline Package) format. This package type is designed for efficient space usage and thermal performance in memory applications.

Pinout

The IS42S16160J-7BL is a 16Mb DRAM (Dynamic Random Access Memory) chip with a pin count of 48. It is organized as 1M x 16 bits and operates at a speed of 7ns.
The pin functions include:
1. Address Pins (A0-A19): Used to select rows and columns in the memory array.
2. Data Pins (DQ0-DQ15): 16 bi-directional data lines for data input and output.
3. Control Signals:
- CS (Chip Select): Activates the chip for operation.
- RAS (Row Address Strobe): Used to latch the row address.
- CAS (Column Address Strobe): Used to latch the column address.
- WE (Write Enable): Controls write operations.
4. Clock Pins (CLK): For synchronous operation.
5. Power Supply Pins (VDD, VSS): Supply voltage and ground.
This configuration allows the IS42S16160J-7BL to function efficiently in various memory applications.

Manufacturer

The IS42S16160J-7BL is manufactured by ISSI (Integrated Silicon Solution, Inc.). ISSI is a semiconductor company that specializes in developing high-performance memory products, including DRAM and Flash memory solutions. Founded in 1988 and headquartered in San Jose, California, ISSI focuses on providing advanced memory technologies for a range of applications, including automotive, industrial, consumer electronics, and communications. The company is known for its commitment to quality and innovation in memory design, catering to the growing demands of the electronics market.

Application

The IS42S16160J-7BL is a 16Mb (2M x 8) synchronous dynamic random-access memory (SDRAM) typically used in applications such as consumer electronics, networking equipment, industrial automation, and mobile devices. It is suitable for data buffering, temporary storage, and memory expansion in systems requiring high-speed data processing and efficient memory management.

Equivalent

The IS42S16160J-7BL is a 16Mb (2Mx8) DRAM chip. Equivalent products include:
1. MT48LC16M8A2P-75
2. Hynix HY57V641620HGL-7
3. Samsung K4S641632E-7
4. Nanya NT5DS16M16D-7
Always verify specifications for compatibility before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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3. Transfert bancaire

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