IS41LV16100D-50TLI

The IS41LV16100D-50TLI is a high-performance 16 Megabit (2M x 8) CMOS Static Random Access Memory (SRAM) chip, designed for applications requiring fast data access and low power consumption. It operates at a maximum access time of 50 nanoseconds and is suitable for use in a variety of electronic devices, including telecommunications, networking, and industrial applications.
This SRAM features a wide operating voltage range, typically between 2.7V and 3.6V, making it compatible with modern low-voltage designs. It offers asynchronous read and write capabilities, enabling quick data manipulation, which is ideal for cache memory and high-speed data buffering.
The chip is provided in a compact TLI (Thin Leadless) package, enhancing its integration into space-constrained applications. Its low standby current further contributes to energy efficiency, making it an excellent choice for battery-operated devices. Overall, the IS41LV16100D-50TLI combines speed, efficiency, and compact design, making it a reliable solution for various memory-intensive applications.

The IS41LV16100D-50TLI is a 16 megabit (2M x 8) CMOS DRAM that operates at a low voltage of 3.0V to 3.6V. Key features include:
1. Access Time: Offers a maximum access time of 50 ns, ensuring fast data retrieval.
2. Low Power Consumption: Designed for low-power applications, it features reduced standby and active power consumption.
3. CMOS Technology: Utilizes advanced CMOS technology for enhanced performance and efficiency.
4. Interface: Compatible with standard DRAM interfaces, facilitating easy integration into various systems.
5. Organization: The chip is organized as 2M x 8 bits, making it suitable for applications requiring 8-bit data paths.
6. Refresh Capability: Employs a ballistically refreshed architecture, allowing for data integrity over time.
7. Package: Available in a compact TFBGA (Thin Fine Pitch Ball Grid Array) package for space-constrained designs.
This DRAM is ideal for use in consumer electronics, telecommunications, and portable devices requiring efficient memory solutions.

The IS41LV16100D-50TLI is packaged in a TSOP II (Thin Small Outline Package) format. This package type is designed for surface mounting and is commonly used for memory devices, providing a compact solution for electronic applications.

The IS41LV16100D-50TLI is a 16M-bit (2M x 8) SRAM (Static Random Access Memory) chip with a pin count of 44.
### Pin Functions:
- Address Pins (A0 - A20): Used to select the memory location.
- Data Pins (D0 - D7): Bidirectional data lines for input/output operations.
- Control Pins:
- WE (Write Enable): Activates the write operation.
- OE (Output Enable): Activates the output on the data lines.
- CE (Chip Enable): Activates the chip for read/write operations.
- Vcc: Power supply pin.
- GND: Ground reference pin.
This device operates at a 3.0V to 3.6V power supply and has a typical access time of 50 ns. It is designed for applications requiring high-speed data access in a compact package.

The manufacturer of the IS41LV16100D-50TLI is Integrated Silicon Solution, Inc. (ISSI). ISSI is a technology company that specializes in designing and manufacturing high-performance memory products, including SRAM, DRAM, and flash memory solutions. Founded in 1988 and headquartered in San Jose, California, the company serves various markets such as consumer electronics, automotive, telecommunications, and industrial applications. ISSI is known for its innovative memory solutions that meet the demands of modern electronic devices.

The IS41LV16100D-50TLI is a 16 megabit (2M x 8) CMOS static RAM suitable for a variety of applications, including telecommunications equipment, networking devices, and consumer electronics. Its low power consumption and high-speed operation make it ideal for cache memory in systems, data buffering, and temporary storage in embedded systems. Additionally, it is used in industrial automation, automotive applications, and portable electronic devices where reliable and fast memory is essential.

The IS41LV16100D-50TLI is a 16Mb (2M x 8) asynchronous SRAM. Equivalent products include:
1. MT48LC16M16A2B (Micron)
2. K4S281632E (Samsung)
3. AS4C16M16D3L (Alliance Memory)
Always verify specifications like voltage, speed, and package type for compatibility in your specific application.