IRLB3813PBF

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IRLB3813PBF

MOSFET N-CH 30V 260A TO220AB

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Spécifications

Package Bulk,Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 260A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 1.95mOhm @ 60A, 10V
Vgs(th)(Max)@Id 2.35V @ 150µA
GateCharge(Qg)(Max)@Vgs 86 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 8420 pF @ 15 V
PowerDissipation(Max) 230W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

IRLB3813PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features a low on-resistance, which minimizes power losses during operation, making it suitable for power management in electronic circuits. With a maximum drain-source voltage of 30V and a continuous drain current rating of around 62A, it is commonly used in power supplies, motor drives, and other industrial applications.
This component is packaged in a TO-220 format, allowing for efficient heat dissipation and easy mounting on heatsinks. The IRLB3813PBF is particularly notable for its fast switching speeds, high robustness, and simplified drive requirements, making it ideal for integration in various electronic designs. Its performance characteristics help improve the efficiency and reliability of power systems, aligning with the growing demand for energy-efficient solutions in modern electronics.

Features

The IRLB3813PBF is a N-channel MOSFET designed for high-efficiency power switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: The continuous drain current (I_D) can reach up to 62A, making it suitable for high-current applications.
3. R_DS(on): It offers low on-resistance (R_DS(on)) of approximately 4.5 mΩ at V_GS = 10V, ensuring minimal power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for efficient switching with lower gate drive voltages.
5. Package Type: It is available in a TO-220 package, which provides good thermal performance and ease of mounting.
6. Applications: Ideal for use in power supplies, DC-DC converters, motor drives, and other high-efficiency switching applications.
These features make the IRLB3813PBF a versatile choice for designers seeking reliable performance in power electronics.

Package

The IRLB3813PBF is typically packaged in a TO-220 format. This package type provides good thermal performance and is suitable for various applications, including power management and switching.

Pinout

The IRLB3813PBF is an N-channel MOSFET with a pin count of 3. The pins are typically arranged as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the load current flows out of the MOSFET. It connects to the load in a circuit.
3. Source (S): This pin is connected to the ground or negative side of the power supply. It serves as the reference point for the drain current.
The IRLB3813PBF is designed for applications that require low on-resistance and high-speed switching, making it suitable for power management and motor control in various electronic circuits.

Manufacturer

The IRLB3813PBF is manufactured by Infineon Technologies AG, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in the development and production of a wide range of semiconductor solutions, including power management, automotive electronics, and security technologies. The company focuses on various markets such as automotive, industrial, and consumer electronics, providing innovative technologies that enhance efficiency and sustainability. Infineon is known for its efforts in energy-efficient technologies and is a significant player in the semiconductor industry.

Application

The IRLB3813PBF is a N-channel MOSFET primarily used in power management applications. Key areas include DC-DC converters, motor control, switching power supplies, and high-speed switching applications. Its low on-resistance and efficient thermal performance make it suitable for battery management systems and power management circuits in consumer electronics, automotive, and industrial applications.

Equivalent

Equivalent products to the IRLB3813PBF MOSFET include the BSS139, IRLZ44N, and STP16NM60N. These alternatives may vary slightly in specifications like voltage and current ratings, so always verify the datasheets for compatibility in specific applications.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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