IRLB3036PBF

Les images sont à titre de référence seulement

IRLB3036PBF

MOSFET N-CH 60V 195A TO220AB

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 195A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 2.4mOhm @ 165A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 140 nC @ 4.5 V
Vgs(Max) ±16V
InputCapacitance(Ciss)(Max)@Vds 11210 pF @ 50 V
PowerDissipation(Max) 380W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

IRLB3036PBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a low on-resistance, allowing for reduced power loss and improved thermal performance, making it suitable for various applications including power management, motor control, and DC-DC converters. The device typically operates with a maximum drain-source voltage (V_DS) of around 60V and can handle continuous drain currents up to 120A, depending on the thermal conditions. Its fast switching speed enhances performance in high-frequency applications. The "PBF" designation indicates that it is lead-free, in compliance with environmental standards. The IRLB3036PBF is often favored in designs requiring reliability and efficiency due to its robust construction and superior electrical characteristics.

Features

The IRLB3036PBF is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 36V.
2. Current Rating: The continuous drain current (I_D) can reach up to 120A at a suitable temperature.
3. Low R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 4.5 mΩ at V_GS = 10V, which reduces power losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 1V to 2V, allowing for easy drive with low-voltage signals.
5. Package Type: The MOSFET is available in a TO-220 package, providing good thermal performance.
6. Fast Switching Speed: The device is optimized for fast switching applications, making it suitable for power converters and motor drives.
These features make the IRLB3036PBF ideal for use in power management systems, automotive applications, and other high-performance electronic devices.

Package

The IRLB3036PBF is commonly available in a TO-220 package type.

Pinout

The IRLB3036PBF is a N-channel MOSFET with a pin count of 3. The pins are configured as follows:
1. Gate (G): This pin controls the MOSFET's switching action. Voltage applied here allows or prevents current flow between the Drain and Source.

2. Drain (D): This pin is where the current flows out of the MOSFET when it is turned on. It connects to the load in the circuit.
3. Source (S): This pin is the terminal from which current enters the MOSFET when it is turned on. It is typically connected to ground or the lower potential in the circuit.
The IRLB3036PBF is known for its low on-resistance and high current handling capability, making it suitable for various power applications, including motor control and switching power supplies.

Manufacturer

The IRLB3036PBF is manufactured by Infineon Technologies AG, a leading global semiconductor company based in Germany. Infineon specializes in providing a wide range of semiconductor and system solutions, focusing on sectors such as automotive, industrial power control, and security technologies. The company is known for its innovative products, including power transistors, microcontrollers, and sensors, and plays a significant role in enabling connected and efficient systems. Infineon is committed to sustainability and aims to support the development of energy-efficient solutions across various applications.

Application

The IRLB3036PBF is a N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, motor drives, power inverters, and high-speed switching applications. This MOSFET is suitable for automotive, industrial, and consumer electronics due to its low on-resistance and high efficiency, enabling improved thermal performance and reduced energy loss.

Equivalent

Equivalent products to the IRLB3036PBF MOSFET include the IRLZ44N, IRLZ34N, and FQP30N06L. These alternatives share similar specifications, such as voltage ratings and RDS(on) values, making them suitable for similar applications in switching and amplification. Always verify specific parameters in your application to ensure compatibility.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire