IRLB3034PBF

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IRLB3034PBF

MOSFET N-CH 40V 195A TO220AB

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Spécifications

Series HEXFET®
Part Status Obsolete
Base Product Number IRLB3034
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 195A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 162 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10315 pF @ 25 V
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package TO-220-3
Packaging Tube

Vue d'ensemble

Description

IRLB3034PBF is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power switching applications. It features a low on-resistance (R_DS(on)) which enhances efficiency by minimizing power loss during operation. With a maximum drain-source voltage of 30V and a continuous drain current rating of up to 94A, it is suitable for a variety of applications, including power management, motor drives, and DC-DC converters. The device boasts a fast switching speed, making it ideal for high-frequency applications. Encased in a TO-220 package, it allows for easy heat dissipation, ensuring reliable operation in demanding environments. It is often used in power supply circuits and automotive applications due to its robust performance and reliability. Overall, IRLB3034PBF is an essential component for engineers looking to design efficient and compact electronic systems.

Features

The IRLB3034PBF is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Capacity: The device can handle a continuous drain current (I_D) of up to 94A at a temperature of 25°C, allowing for robust performance in demanding conditions.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of around 2.5 mΩ at a V_GS of 10V, which minimizes power loss and increases efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2V, enabling it to be driven easily by low-voltage logic levels.
5. Package: Available in a TO-220 package, facilitating efficient heat dissipation and easy mounting.
6. Fast Switching: It supports rapid switching speeds, making it suitable for applications like DC-DC converters and motor drivers.
Overall, the IRLB3034PBF is ideal for high-power, low-voltage applications requiring efficient switching.

Package

The IRLB3034PBF is typically available in a TO-220 package. This package type features three leads and is designed for efficient heat dissipation, making it suitable for power applications.

Pinout

The IRLB3034PBF is a N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.

2. Drain (D): This pin is where the load current is delivered from the MOSFET. It connects to the load in the circuit.
3. Source (S): This pin is the return path for the current flowing through the MOSFET. It connects to the ground or the negative side of the power supply in typical applications.
The IRLB3034PBF is designed for high-speed switching applications and is commonly used in power management and switching power supplies. It features low on-resistance, making it efficient for various electronic applications.

Manufacturer

The IRLB3034PBF is manufactured by Infineon Technologies, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in semiconductor solutions for automotive, industrial, and multimarket applications, focusing on areas such as power management, automotive safety, and security technologies. The company is known for its innovation in power semiconductors, including MOSFETs, which are widely used in various electronic devices and systems. Infineon's products are essential for improving energy efficiency and performance in a range of applications, from consumer electronics to electric vehicles and renewable energy systems.

Application

The IRLB3034PBF is a N-channel MOSFET primarily used in applications like power management, battery management systems, motor control, and DC-DC converters. Its low on-resistance and high current capability make it suitable for switching applications in consumer electronics, renewable energy systems, and automotive circuits. Additionally, it is utilized in load switching and high-efficiency power supplies.

Equivalent

Equivalent products to the IRLB3034PBF MOSFET include the BSS140, IRLZ44N, and STP16NF06. Ensure to check specifications like Vds, Id, and Rds(on) for compatibility with your application. Always verify the intended use case and operating conditions.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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