IRL60HS118

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IRL60HS118

MOSFET N-CH 60V 18.5A 6PQFN

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Spécifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 18.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 17mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.3V @ 10µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 25 V
Power Dissipation (Max) 11.5W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-PQFN (2x2) (DFN2020)
Package / Case 6-PowerVDFN
Base Product Number IRL60HS118

Vue d'ensemble

Description

IRL60HS118 is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features low on-resistance and fast switching capabilities, making it ideal for use in power management systems, DC-DC converters, and other high-efficiency applications. The device typically supports higher voltage levels, ensuring reliability in demanding environments.
Key specifications include a maximum drain-source voltage (V_DS) rating, a specific gate threshold voltage (V_GS), and thermal characteristics that allow for effective heat dissipation. Its compact package size facilitates integration into various electronic circuits, making it suitable for automotive, industrial, and consumer electronics applications.
In summary, the IRL60HS118 is engineered for efficiency and performance in power electronics, providing users with a reliable component for enhancing system design and functionality.

Features

The IRL60HS118 is a high-performance N-channel MOSFET designed for various applications, including power management, DC-DC converters, and motor control. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (Vds) of 60V, making it suitable for medium voltage applications.
2. Current Handling: Capable of handling continuous drain currents up to 80A, allowing it to drive high loads efficiently.
3. RDS(on): Low on-resistance (typically around 0.025Ω at Vgs = 10V), which helps minimize power loss and improve efficiency.
4. Gate Threshold Voltage: Low gate threshold voltage (Vgs(th)) ensures it can be driven by low-voltage logic levels.
5. Fast Switching Speed: High-speed switching capabilities reduce switching losses, making it ideal for high-frequency applications.
6. Thermal Performance: Designed with good thermal management, allowing for higher performance in compact designs.
Overall, the IRL60HS118 is well-suited for high-efficiency electronic designs requiring robust control and performance.

Package

The IRL60HS118 is typically available in a TO-220 package type. This package features a metal tab for heat dissipation and is commonly used for power transistor applications.

Pinout

The IRL60HS118 is a high-speed N-channel MOSFET with a pin count of 8. Its function is primarily for switching applications and power management in a variety of electronic circuits. The device is designed to handle high currents and voltages, making it suitable for use in power supplies, motor drivers, and other power conversion applications.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's operation (turns it on/off).
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to ground or the negative side of the power supply.
4. Body Diode: Integrated within the MOSFET structure, providing reverse current capability.
The IRL60HS118 features low on-resistance and high-speed switching capabilities, which enhance efficiency in power applications. It is typically used in applications where low gate drive voltage is required.

Manufacturer

The IRL60HS118 is manufactured by International Rectifier, a subsidiary of Infineon Technologies AG. International Rectifier specializes in power management and power semiconductor technologies, producing a wide range of products including MOSFETs, IGBTs, and integrated circuits. The company is known for its innovations in power electronics, serving various industries such as automotive, industrial, and consumer electronics. Infineon Technologies AG, its parent company, is a leading global provider of semiconductors, focusing on energy efficiency, mobility, and security solutions.

Application

The IRL60HS118 is a high-speed, N-channel MOSFET commonly used in various applications, including power management systems, switch-mode power supplies, motor control, and automotive electronics. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power conversion, lighting control, and renewable energy systems, such as solar inverters.

Equivalent

The IRL60HS118 is an N-channel MOSFET. Equivalent products include the STP60NF06, FQP60N06, and BSS138. These alternatives may vary in specifications like voltage rating, current capacity, and RDS(on) values, so it's essential to confirm compatibility based on your specific application requirements.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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