IRGP4066D-EPBF

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IRGP4066D-EPBF

IGBT TRENCH 600V 140A TO247AD

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Spécifications

Supplier Infineon Technologies
Package Tube
ProductStatus Obsolete
IGBTType Trench
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 140 A
Current-CollectorPulsed(Icm) 225 A
Vce(on)(Max)@VgeIc 2.1V @ 15V, 75A
Power-Max 454 W
SwitchingEnergy 2.47mJ (on), 2.16mJ (off)
InputType Standard
GateCharge 150 nC
Td(on/off)@25°C 50ns/200ns
TestCondition 400V, 75A, 10Ohm, 15V
ReverseRecoveryTime(trr) 155 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Vue d'ensemble

Description

IRGP4066D-EPBF is a high-performance, low-power voltage regulator designed for various applications, particularly in consumer electronics and industrial devices. It offers a low dropout voltage, enabling efficient operation even with minimal input-output voltage differential. The device features a fixed output voltage and incorporates built-in protection mechanisms such as overcurrent protection and thermal shutdown, ensuring reliability and safety in operation.
The IRGP4066D-EPBF is ideal for battery-powered applications due to its low quiescent current, which helps prolong battery life. Its compact package allows for efficient thermal management and PCB space optimization. The regulator operates over a wide temperature range, making it suitable for diverse environmental conditions.
Overall, IRGP4066D-EPBF is engineered for robust performance, providing a stable output voltage while minimizing power loss, making it a preferred choice for engineers looking to enhance the efficiency of their designs.

Features

The IRGP4066D-EPBF is an N-channel MOSFET designed for high-power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 60V, making it suitable for various applications.
2. Continuous Drain Current: It supports a continuous drain current (ID) of up to 40A, allowing it to handle significant loads.
3. RDS(on): The on-resistance is typically low at around 0.1 Ohms, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) ranges from 2V to 4V, enabling efficient switching at lower voltages.
5. Fast Switching Speed: It offers rapid switching capabilities, making it ideal for applications such as power converters and motor drives.
6. Package Type: Encased in a TO-220 package, it provides good thermal management and is easy to mount.
Overall, the IRGP4066D-EPBF is suited for applications requiring reliable performance and efficiency in power management.

Package

The IRGP4066D-EPBF is packaged in a TO-220 form factor, which is a standard package for power transistors. This package provides efficient thermal management and is suitable for applications requiring high power handling and reliability.

Pinout

The IRGP4066D-EPBF is a high-voltage, N-channel IGBT (Insulated Gate Bipolar Transistor) with a pin count of 6. Its function is to efficiently switch and control electrical power in various applications, such as motor drives, power inverters, and other power conversion systems.
Pin Configuration:
1. Gate (G): Controls the switching of the IGBT.
2. Collector (C): Connects to the load; where the output current flows.
3. Emitter (E): Connects to ground; provides the return path for current.
4. Collector (C): Additional collector pin for enhanced connectivity.
5. Emitter (E): Additional emitter pin for enhanced connectivity.
6. Gate (G): Additional gate pin for better control.
The device is designed for high efficiency and fast switching capabilities, making it suitable for various demanding applications in power electronics.

Manufacturer

The IRGP4066D-EPBF is manufactured by Infineon Technologies. Infineon is a global semiconductor company that specializes in designing and producing a wide range of semiconductor and system solutions. Their products are often used in automotive, industrial, and consumer electronics applications. Infineon is known for its focus on power management, automotive safety, and energy efficiency, making it a key player in the rapidly evolving fields of electronics and electrical engineering. The company is headquartered in Neubiberg, Germany, and has a significant presence in the global semiconductor market.

Application

The IRGP4066D-EPBF is an insulated gate bipolar transistor (IGBT) primarily used in high-efficiency power applications. Its application areas include motor drives, renewable energy systems (like solar inverters and wind turbines), industrial automation, power supplies, and electric vehicles. It is suitable for use in applications requiring high voltage and current handling with fast switching capabilities.

Equivalent

The IRGP4066D-EPBF is a high-power IGBT (Insulated Gate Bipolar Transistor). Equivalent products include:
1. STGW30NC60 - STMicroelectronics
2. M67119-30 - Fairchild Semiconductor
3. FGA25N60 - ON Semiconductor
4. IXGH40N60 - IXYS Corporation
Always check the datasheets for specific electrical characteristics and application compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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