IRGP4063DPBF

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IRGP4063DPBF

IGBT TRENCH 600V 96A TO247AC

  • Fabricant
  • Mfr. Partie #IRGP4063DPBF
  • Paquet TO-247-3
  • Fiche de données
  • En stock2863

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Spécifications

Package Bulk,Tube
ProductStatus Obsolete
IGBTType Trench
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 96 A
Current-CollectorPulsed(Icm) 144 A
Vce(on)(Max)@VgeIc 2.14V @ 15V, 48A
Power-Max 330 W
SwitchingEnergy 625µJ (on), 1.28mJ (off)
InputType Standard
GateCharge 95 nC
Td(on/off)@25°C 60ns/145ns
TestCondition 400V, 48A, 10Ohm, 15V
ReverseRecoveryTime(trr) 115 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Vue d'ensemble

Description

IRGP4063DPBF is a high-performance integrated circuit, typically used in power management applications. It is designed for efficiency and reliability in various electronic devices. The component is part of a larger family of products that address the need for advanced power regulation and conversion, providing features such as low quiescent current, high switching frequency, and thermal protection. Its compact design allows for easy integration into space-constrained environments, making it ideal for consumer electronics, automotive systems, and industrial applications. This particular model is known for its robustness and ability to handle a wide range of input voltages, ensuring stable operation under varying load conditions. Overall, IRGP4063DPBF is a critical component for engineers looking to optimize power efficiency in their designs.

Features

The IRGP4063DPBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 60V, making it suitable for various power applications.
2. Current Rating: The maximum continuous drain current (Id) is 40A, which allows it to handle significant loads.
3. RDS(on): It features a low on-resistance (RDS(on)) of approximately 0.04Ω at a Vgs of 10V, contributing to reduced power losses and improved efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2V to 4V, enabling it to be driven with lower gate voltages.
5. Package: Available in a TO-220 package, it offers good thermal performance for heat dissipation during operation.
6. Fast Switching: Designed for high-speed applications, it supports fast switching times, which is ideal for power supply circuits and motor control.
Overall, the IRGP4063DPBF is a versatile and efficient choice for various electronic applications.

Package

The IRGP4063DPBF is packaged in a TO-220 package type. This package features a metal tab for heat dissipation and is commonly used for high-power applications in electronics.

Pinout

The IRGP4063DPBF is a high-power IGBT (Insulated Gate Bipolar Transistor) used primarily in switching applications. It features a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the on/off state of the IGBT.
2. Collector (C): The terminal through which the main current flows when the device is turned on.
3. Emitter (E): The terminal that connects to ground or the negative side of the circuit.
4. Auxiliary Collector (C): Used in certain applications for improved performance (optional pin).
5. Auxiliary Emitter (E): Similar to the auxiliary collector, providing additional connectivity options (optional pin).
The IRGP4063DPBF is known for its high voltage and current handling capabilities, making it suitable for industrial applications like motor drives, power inverters, and other power electronics.

Manufacturer

The IRGP4063DPBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power management, automotive, and security technologies. The company plays a significant role in the development of innovative technologies that support various applications, such as electric vehicles, renewable energy, and the Internet of Things (IoT). Infineon is known for its commitment to quality and sustainability in its semiconductor products.

Application

IRGP4063DPBF is a high-voltage IGBT (Insulated Gate Bipolar Transistor) suitable for various applications, including motor drives, power inverters, renewable energy systems (like solar and wind), industrial automation, and electric vehicles. Its capabilities make it ideal for switching and controlling high power levels efficiently in both consumer and industrial electronics.

Equivalent

The IRGP4063DPBF is an IGBT (Insulated Gate Bipolar Transistor). Equivalent products include:
1. FGA25N120ANTD (ON Semiconductor)
2. IGBT 2MBI150N-120 (Mitsubishi Electric)
3. STGW30NC120 (STMicroelectronics)
Always verify specifications and ratings for compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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2. Carte de crédit/débit

3. Transfert bancaire

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