IRGP4062DPBF

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IRGP4062DPBF

IGBT 600V 48A 250W TO247AC

  • Fabricant
  • Mfr. Partie #IRGP4062DPBF
  • Paquet TO-247-3
  • Fiche de données
  • En stock4766

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Spécifications

Package Tube
ProductStatus Obsolete
IGBTType Trench
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 48 A
Current-CollectorPulsed(Icm) 72 A
Vce(on)(Max)@VgeIc 1.95V @ 15V, 24A
Power-Max 250 W
SwitchingEnergy 115µJ (on), 600µJ (off)
InputType Standard
GateCharge 50 nC
Td(on/off)@25°C 41ns/104ns
TestCondition 400V, 24A, 10Ohm, 15V
ReverseRecoveryTime(trr) 89 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Vue d'ensemble

Description

IRGP4062DPBF is a specific component identified by its designation, likely referring to a particular type of Integrated Circuit (IC) or semiconductor device. While detailed documentation on this specific part may be limited, components with similar designations typically serve functions in various electronic applications, including signal processing, amplification, or power management. The "DPBF" suffix often indicates a package type or specific features relevant to its functionality, such as low power consumption or high efficiency.
For accurate information, reference the manufacturer's datasheet, which provides essential details including electrical characteristics, pin configuration, typical applications, and operating conditions. Understanding these parameters is crucial for engineers and developers when integrating the component into their designs or systems.

Features

The IRGP4062DPBF is a high-performance MOSFET designed for power switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power supply applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 40A, allowing for significant power handling.
3. Low R_DS(on): Its low on-resistance (R_DS(on)) enhances efficiency by reducing power loss during operation, typically around 6.5 mΩ at a gate-source voltage (V_GS) of 10V.
4. Fast Switching: The IRGP4062DPBF features fast switching capabilities, improving overall circuit performance in high-frequency applications.
5. Thermal Performance: It is designed to operate at high temperatures with a maximum junction temperature of 175°C, ensuring reliability in demanding environments.
6. Package Type: The device is offered in a TO-220 package, facilitating effective heat dissipation.
These features make the IRGP4062DPBF ideal for applications such as power supplies, motor drives, and automotive systems.

Package

The IRGP4062DPBF is packaged in a TO-247 format, which is a high-power package designed for efficient thermal performance and ease of mounting in electronic circuits.

Pinout

The IRGP4062DPBF is an N-channel IGBT (Insulated Gate Bipolar Transistor) with a pin count of 5. The pin configuration is as follows:
1. Gate (G): The gate terminal is used to control the switching of the IGBT. Applying a voltage here turns the device on.

2. Collector (C): This is the main terminal where the current flows into the device. The collector receives power from the load.
3. Emitter (E): The emitter terminal is where the current exits the device after passing through the collector.
4. Thermal Pad: This is not a pin but is used for heat dissipation, ensuring the device operates within safe temperature limits.
5. Vce (Voltage Collector-Emitter): While not a pin itself, it is an important voltage specification for the operation of the IGBT, indicating the maximum voltage that can be applied across the collector and emitter.
The IRGP4062DPBF is commonly used in applications such as motor drives, inverters, and power converters.

Manufacturer

The IRGP4062DPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. Infineon’s products are used in various applications, such as automotive, industrial, and communication technologies, making it a key player in the electronics industry. The IRGP4062DPBF specifically is an insulated gate bipolar transistor (IGBT) designed for high-performance applications, emphasizing efficiency and power handling.

Application

The IRGP4062DPBF is an IGBT (Insulated Gate Bipolar Transistor) used in various applications, including motor drives, power inverters, renewable energy systems, and industrial automation. It is suitable for high-efficiency switching in power electronics, such as UPS systems and welding equipment, due to its high voltage and current ratings. Its low on-state voltage drop makes it ideal for applications requiring energy efficiency.

Equivalent

The IRGP4062DPBF is a high-voltage IGBT. Equivalent products include the Fairchild FGA25N120ANTD, ON Semiconductor MBRF30100CT, and Infineon IGBT modules like the IGBT40N60T. Always verify specifications such as voltage, current rating, and switching frequency when selecting an equivalent.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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