IRGP30B120KD-EP

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IRGP30B120KD-EP

IGBT 1200V 60A 300W TO247AD

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Spécifications

Package Tube
ProductStatus Obsolete
IGBTType NPT
Voltage-CollectorEmitterBreakdown(Max) 1200 V
Current-Collector(Ic)(Max) 60 A
Current-CollectorPulsed(Icm) 120 A
Vce(on)(Max)@VgeIc 4V @ 15V, 60A
Power-Max 300 W
SwitchingEnergy 1.07mJ (on), 1.49mJ (off)
InputType Standard
GateCharge 169 nC
TestCondition 600V, 25A, 5Ohm, 15V
ReverseRecoveryTime(trr) 300 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Vue d'ensemble

Description

The IRGP30B120KD-EP is a high-performance insulated gate bipolar transistor (IGBT) designed for applications requiring efficient power switching. It has a voltage rating of 1200V and a current rating of 30A, making it suitable for use in industrial motor drives, renewable energy systems, and power inverters.
Key features include low conduction losses, high-speed switching capabilities, and a robust design that enhances reliability in harsh environments. The IGBT also incorporates an anti-parallel diode for improved performance during switching transitions.
Its enhanced thermal management characteristics allow for effective heat dissipation, improving overall system efficiency. The IRGP30B120KD-EP is often favored in applications where size, weight, and energy efficiency are critical, such as in electric vehicles and HVAC systems.
Overall, this component is ideal for engineers seeking a reliable and efficient solution for high-voltage power applications.

Features

The IRGP30B120KD-EP is an N-channel IGBT (Insulated Gate Bipolar Transistor) designed for high-performance applications. Key features include:
1. Voltage Rating: It supports a maximum collector-emitter voltage (Vce) of 1200V.
2. Current Rating: The device can handle continuous collector current (Ic) of up to 30A.
3. Low Thermal Resistance: It features low thermal resistance, allowing for efficient heat dissipation.
4. Fast Switching Speed: Designed for high-speed applications, it offers fast switching characteristics.
5. Low On-State Voltage: It provides low on-state voltage drop, enhancing efficiency.
6. Robust Design: The device is built for reliability in harsh environments, including industrial applications.
7. Package Type: Typically comes in a TO-220 package, facilitating easy mounting and heat management.
These features make the IRGP30B120KD-EP suitable for various applications, including motor drives, power inverters, and other power electronic systems.

Package

The IRGP30B120KD-EP is packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used in power applications.

Pinout

The IRGP30B120KD-EP is an N-channel IGBT (Insulated Gate Bipolar Transistor) designed for high-power applications. It features a total of 4 pins.
Pin configuration is as follows:
1. Gate (G) - This pin controls the switching of the IGBT. A voltage applied here turns the device on or off.
2. Collector (C) - This is the main terminal where the high voltage is applied, allowing current to flow through the device when it is in the on state.
3. Emitter (E) - This pin serves as the output terminal, providing a path for current to exit the device when it is on.
4. Source (S) - In certain configurations, this pin acts as a return path for the emitter.
The IRGP30B120KD-EP is suitable for applications such as motor control, inverters, and power supplies, handling high voltages up to 1200V and currents up to 30A.

Manufacturer

The IRGP30B120KD-EP is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, sensors, and microcontrollers for various applications such as automotive, industrial, and consumer electronics. The company is known for its innovations in power management and energy efficiency, playing a significant role in the development of technologies for electric vehicles, renewable energy, and various industrial applications. Infineon focuses on creating efficient, reliable, and sustainable semiconductor technologies that support the growing demands of the digital and green economy.

Application

The IRGP30B120KD-EP is primarily used in high-power applications such as industrial motor drives, power inverters, induction heating, and renewable energy systems (like solar inverters). It is suitable for applications requiring high efficiency and reliability in switching operations, often found in the automotive, aerospace, and consumer electronics sectors. Its ability to handle high voltages and currents makes it ideal for demanding environments.

Equivalent

The IRGP30B120KD-EP is an IGBT module. Equivalent products include:
1. Infineon FF100R12KT4 - 100A, 1200V IGBT.
2. Mitsubishi CM100DY-12NF - 100A, 1200V IGBT.
3. SEMIKRON SKM100GB123D - 100A, 1200V IGBT.
Ensure compatibility in terms of voltage, current ratings, and application specifications when selecting alternatives.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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2. Carte de crédit/débit

3. Transfert bancaire

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