IRG4PH50SPBF

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IRG4PH50SPBF

IGBT 1200V 57A 200W TO247AC

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Spécifications

Package Tube
ProductStatus Obsolete
Voltage-CollectorEmitterBreakdown(Max) 1200 V
Current-Collector(Ic)(Max) 57 A
Current-CollectorPulsed(Icm) 114 A
Vce(on)(Max)@VgeIc 1.7V @ 15V, 33A
Power-Max 200 W
SwitchingEnergy 1.8mJ (on), 19.6mJ (off)
InputType Standard
GateCharge 167 nC
Td(on/off)@25°C 32ns/845ns
TestCondition 960V, 33A, 5Ohm, 15V
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Vue d'ensemble

Description

IRG4PH50SPBF is a high-performance N-channel MOSFET designed for efficient power management in various electronic applications. It features low on-resistance and fast switching speeds, making it suitable for high-frequency applications such as power converters, motor drivers, and power supplies. The device is characterized by its ability to handle high voltages and currents, providing robust performance and reliability. The "SPBF" suffix indicates a lead-free and RoHS-compliant product, aligning with environmental regulations. Overall, IRG4PH50SPBF is ideal for applications requiring efficient thermal management and compact design, making it a popular choice among engineers and designers in the semiconductor industry.

Features

The IRG4PH50SPBF is a high-voltage, N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: It can handle drain-source voltages up to 500V, making it suitable for high-voltage applications.
2. Current Rating: Offers a continuous drain current of up to 4A, allowing for significant power throughput.
3. RDS(on): Low on-resistance reduces power loss during operation, improving overall efficiency.
4. Gate Threshold Voltage: Allows for easy drive with standard logic levels, making it compatible with various control circuits.
5. Thermal Performance: Features a junction-to-case thermal resistance that enhances reliability under high-temperature conditions.
6. Packages: Available in surface-mount and through-hole packages, facilitating integration into different designs.
These characteristics make the IRG4PH50SPBF ideal for applications in power supplies, motor drives, and other high-efficiency systems.

Package

The IRG4PH50SPBF is packaged in a TO-220 type package, which is commonly used for power transistors. This package provides good thermal performance and is suitable for mounting on heatsinks for efficient heat dissipation.

Pinout

The IRG4PH50SPBF is a 4-pin insulated gate bipolar transistor (IGBT) module. It features the following pin configuration and functions:
1. Gate (G) - This pin controls the switching of the IGBT. A voltage applied here turns the device on or off.
2. Collector (C) - This pin is connected to the high voltage side of the circuit, allowing current to flow through the IGBT when it is activated.
3. Emitter (E) - This pin is connected to the low voltage side of the circuit and serves as the return path for current flowing through the IGBT.
4. Mounting (D) - It is typically a thermal connection for heat dissipation.
The IRG4PH50SPBF is designed for high-efficiency applications, supporting high voltage and current ratings, usually with a blocking voltage of around 600V and continuous current capability of 50A.

Manufacturer

The IRG4PH50SPBF is manufactured by Infineon Technologies AG, a global leader in semiconductor solutions. Infineon specializes in products that enhance energy efficiency, mobility, and security, focusing on markets such as automotive, industrial, and consumer electronics. The company is well-known for its expertise in power semiconductors, sensors, and microcontrollers. Infineon is headquartered in Neubiberg, Germany, and operates worldwide, providing innovative solutions that drive the digitalization and electrification of various industries.

Application

The IRG4PH50SPBF is a high-voltage, low-gate charge MOSFET primarily used in power management applications. Its key areas include switch-mode power supplies (SMPS), DC-DC converters, motor drives, and industrial power systems. It is suitable for both high-efficiency and high-frequency applications, making it ideal for renewable energy systems, battery management, and electric vehicles.

Equivalent

The IRG4PH50SPBF is an IGBT (Insulated Gate Bipolar Transistor) with a voltage rating of 500V and a current rating of 50A. Equivalent products include the IXGH50N60C3, FGA50N60, and MG50J6ES. Always verify specifications like voltage, current, and switching characteristics before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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