IRG4PF50WPBF

Les images sont à titre de référence seulement

IRG4PF50WPBF

IGBT 900V 51A 200W TO247AC

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Package Tube
ProductStatus Obsolete
Voltage-CollectorEmitterBreakdown(Max) 900 V
Current-Collector(Ic)(Max) 51 A
Current-CollectorPulsed(Icm) 204 A
Vce(on)(Max)@VgeIc 2.7V @ 15V, 28A
Power-Max 200 W
SwitchingEnergy 190µJ (on), 1.06mJ (off)
InputType Standard
GateCharge 160 nC
Td(on/off)@25°C 29ns/110ns
TestCondition 720V, 28A, 5Ohm, 15V
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Vue d'ensemble

Description

The IRG4PF50WPBF is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 4A, making it suitable for use in high-efficiency switching applications, such as power supplies and inverters.
Key specifications include low on-state resistance (R_DS(on)), which enhances efficiency by minimizing heat generation during operation. The device also offers fast switching capabilities, enabling it to handle high-frequency operations.
The IRG4PF50WPBF is packaged in a TO-220 form factor, facilitating efficient heat dissipation. It is often used in applications like motor drives, lighting control, and renewable energy systems.
Overall, its combination of high voltage, efficient performance, and thermal management makes it a versatile choice for power electronic designs.

Features

The IRG4PF50WPBF is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for applications such as motor drives, induction heating, and power inverters. Key features include:
1. Voltage Rating: Operates with a maximum collector-emitter voltage of 600V.
2. Current Rating: Capable of handling continuous collector current (Ic) up to 50A.
3. Low Conduction Losses: Provides efficient operation with a low saturation voltage, which minimizes power loss.
4. Fast Switching Speed: Designed for rapid switching, making it suitable for high-frequency applications.
5. Robust Design: Features a rugged construction that ensures reliability in harsh environments.
6. Thermal Performance: Good thermal management capabilities, allowing for effective heat dissipation.
7. TO-220 Package: Comes in a standard TO-220 package, which facilitates easy mounting and heat sinking.
Overall, the IRG4PF50WPBF is ideal for various power electronic applications demanding efficiency and reliability.

Package

The IRG4PF50WPBF is packaged in a TO-247 style package. This package type is designed for high-power applications, providing efficient heat dissipation and robust mechanical support for the power transistor.

Pinout

The IRG4PF50WPBF is an IGBT (Insulated Gate Bipolar Transistor) with a total of 4 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the switching of the transistor. A voltage applied to this pin turns the device on or off.
2. Collector (C): This pin is the main current-carrying terminal where the high-voltage output is connected.
3. Emitter (E): This pin is connected to the ground or the negative side of the power circuit, completing the circuit path for current flow.
4. Thermal Pad (T): While not always listed as a pin in traditional terms, the thermal pad is used for heat dissipation and is typically connected to the ground for better thermal management.
The IRG4PF50WPBF is designed for high-voltage applications, typically up to 600V, and is commonly used in power conversion, motor control, and industrial automation.

Manufacturer

The IRG4PF50WPBF is manufactured by Infineon Technologies, a global semiconductor company. Infineon specializes in the development and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company focuses on applications in automotive, industrial, and communication sectors, emphasizing energy efficiency and power management. Infineon is recognized for its innovation in the semiconductor industry, providing high-quality components for various electronic applications.

Equivalent

The IRG4PF50WPBF is an IGBT (Insulated Gate Bipolar Transistor) with a 600V rating and 50A current capacity. Equivalent products include the STGW50H65, FGH50N60, and MBRF50-60. Always verify specifications for exact replacements in your application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire