IRG4BH20K-S

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IRG4BH20K-S

IGBT 1200V 11A 60W D2PAK

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Spécifications

Supplier Infineon Technologies
Package Tube
ProductStatus Obsolete
Voltage-CollectorEmitterBreakdown(Max) 1200 V
Current-Collector(Ic)(Max) 11 A
Current-CollectorPulsed(Icm) 22 A
Vce(on)(Max)@VgeIc 4.3V @ 15V, 5A
Power-Max 60 W
SwitchingEnergy 450µJ (on), 440µJ (off)
InputType Standard
GateCharge 28 nC
Td(on/off)@25°C 23ns/93ns
TestCondition 960V, 5A, 50Ohm, 15V
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vue d'ensemble

Description

IRG4BH20K-S is a specific type of infrared sensor or module, often utilized in various applications such as temperature measurement, motion detection, or environmental monitoring. The "IRG" typically indicates its functionality related to infrared technology, while "4BH20K" can denote specifications like sensitivity range, output types, or unique product identifiers. The "S" may signify a specific version or model variant.
These sensors can be used in industrial, residential, or commercial settings, providing efficient solutions for automation and control systems. They convert infrared radiation into electrical signals, facilitating real-time data processing. Key features often include low power consumption, fast response times, and high accuracy, making them suitable for integration into smart devices or systems.
For specific technical details, including operational parameters, installation guidelines, and application examples, consulting the manufacturer's datasheet or technical documentation is recommended.

Features

The IRG4BH20K-S is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for various power applications. Key features include:
1. Voltage Rating: It typically offers a maximum collector-emitter voltage of 1200V, making it suitable for high-voltage applications.
2. Current Rating: With a continuous collector current rating of up to 40A, it can handle significant power loads.
3. Low On-State Voltage: The device features a low Vce(sat) that minimizes power losses during operation.
4. Fast Switching Speed: It supports rapid switching, ideal for applications requiring high efficiency.
5. Thermal Stability: Designed to operate effectively across a wide temperature range, enhancing reliability in harsh conditions.
6. Package Type: Usually available in a TO-247 package, facilitating easy thermal management and mounting.
7. Applications: Commonly used in motor drives, induction heating, and other high-power switching applications.
This combination of features makes the IRG4BH20K-S suitable for demanding industrial and automotive environments.

Package

The IRG4BH20K-S is typically packaged in a TO-220 form factor. This packaging provides good thermal performance and is commonly used for high-power applications in electronic circuits.

Pinout

The IRG4BH20K-S is an insulated gate bipolar transistor (IGBT) with a total of 6 pins. Its primary functions include switching applications in power electronics, such as motor drives, inverters, and other high-voltage power applications. The pin configuration is as follows:
1. Gate (G) - Controls the switching operation.
2. Collector (C) - Connects to the positive voltage supply in the circuit.
3. Emitter (E) - Connects to the ground or negative side of the circuit.
4. Auxiliary Collector (C2) - Additional collector terminal for enhanced performance in some circuit configurations.
5. Auxiliary Emitter (E2) - Additional emitter terminal for improved thermal management.
6. Thermal Pad - Used for heat dissipation, ensuring the device operates within safe temperature limits.
This device is suitable for high-voltage applications, offering low on-state voltage drop and efficient switching characteristics.

Manufacturer

The IRG4BH20K-S is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company based in Germany, specializing in various sectors, including automotive, industrial power control, and security technologies. The company designs, develops, and produces a wide range of semiconductor solutions, with a focus on high-performance and energy-efficient products. Infineon plays a key role in enabling innovations in the Internet of Things (IoT), renewable energy, and advanced driver assistance systems (ADAS).

Application

The IRG4BH20K-S is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor) primarily used in industrial applications such as motor drives, power converters, and renewable energy systems like solar inverters. Its capabilities make it suitable for switching applications, including induction heating and UPS systems, where efficiency and thermal management are critical.

Equivalent

The IRG4BH20K-S is an IGBT (Insulated Gate Bipolar Transistor) manufactured by International Rectifier. Equivalent products include the Infineon IGBT series, like the IKW40N60T, and the ON Semiconductor MBRF20H, as well as other IGBTs with similar voltage and current ratings (e.g., 600V, 20A). Ensure to check specific datasheets for exact specifications and characteristics to confirm compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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