IRG4BC30KDPBF

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IRG4BC30KDPBF

IGBT 600V 28A 100W TO220AB

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Spécifications

Supplier Infineon Technologies
Package Tube
ProductStatus Obsolete
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 28 A
Current-CollectorPulsed(Icm) 56 A
Vce(on)(Max)@VgeIc 2.7V @ 15V, 16A
Power-Max 100 W
SwitchingEnergy 600µJ (on), 580µJ (off)
InputType Standard
GateCharge 67 nC
Td(on/off)@25°C 60ns/160ns
TestCondition 480V, 16A, 23Ohm, 15V
ReverseRecoveryTime(trr) 42 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-220-3

Vue d'ensemble

Description

IRG4BC30KDPBF is a specific model of an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. This component is designed for use in various electronic applications, including power management, switching, and signal processing. The "IRG" designation indicates that it belongs to the International Rectifier family of devices, while the numbers indicate specific characteristics such as voltage rating and package type.
Key features of the IRG4BC30KDPBF include a high voltage rating, low on-resistance, and fast switching capabilities, making it suitable for applications in power supplies, motor control, and other high-efficiency systems. Its compact package and robust performance make it a popular choice for engineers looking to optimize circuit designs.
When integrating the IRG4BC30KDPBF into a circuit, it is essential to consider parameters such as gate threshold voltage, thermal resistance, and maximum drain current to ensure reliable operation in the intended application.

Features

The IRG4BC30KDPBF is an N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: Continuous drain current (I_D) up to 40A, allowing for robust performance in power applications.
3. R_DS(on): Low on-resistance (typically around 12 mΩ), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Low gate threshold voltage (V_GS(th)), enabling it to be driven by standard logic levels.
5. Fast Switching: Capable of high-speed switching, making it ideal for applications in power supplies and motor control.
6. Package Type: Available in a TO-220 package, which provides good thermal performance.
Overall, the IRG4BC30KDPBF is ideal for applications requiring high current capacity and efficiency in compact designs.

Package

The IRG4BC30KDPBF is packaged in a TO-220 format, which is a widely used type of package for power transistors. This package provides good thermal performance and is suitable for mounting on heatsinks.

Pinout

The IRG4BC30KDPBF is an IGBT (Insulated Gate Bipolar Transistor) module with a total of 4 pins. The pin configuration typically includes:
1. Collector (C) - This is the main terminal through which the current flows when the IGBT is turned on.
2. Gate (G) - This terminal controls the ON/OFF states of the IGBT by applying a voltage.
3. Emitter (E) - This terminal is where the current exits the IGBT when it is on.
4. Thermal Pad (TP) - Although not a pin in the traditional sense, this pad is used for thermal management, aiding in heat dissipation.
The IRG4BC30KDPBF is designed for high-efficiency switching applications in power electronics, such as motor drives and inverters. It can handle high voltage and current, making it suitable for various industrial applications.

Manufacturer

The manufacturer of the IRG4BC30KDPBF is Infineon Technologies AG. Infineon is a leading global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in designing and producing a wide range of semiconductor solutions, including power management, automotive, and security technologies. Infineon's products are used across various industries, including automotive, industrial, consumer electronics, and communication. The IRG4BC30KDPBF is a high-voltage IGBT (Insulated Gate Bipolar Transistor), commonly used in applications such as motor drives, power inverters, and industrial equipment.

Application

The IRG4BC30KDPBF is an insulated gate bipolar transistor (IGBT) primarily used in high-power applications such as industrial motor drives, renewable energy systems (like solar inverters), and uninterruptible power supplies (UPS). It is also suitable for automotive applications, including electric and hybrid vehicles, where efficient switching and thermal management are crucial.

Equivalent

The IRG4BC30KDPBF is an IGBT (Insulated Gate Bipolar Transistor) from Infineon. Equivalent products include the STGW30H65, FGA30N60SMD, and IXGH30N60C2. Always verify specific ratings and characteristics before substitution, as variations in voltage, current, and thermal performance may exist.

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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