IRFZ34NPBF

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IRFZ34NPBF

MOSFET N-CH 55V 29A TO220AB

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 55 V
Current-ContinuousDrain(Id)@25°C 29A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 40mOhm @ 16A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 34 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 700 pF @ 25 V
PowerDissipation(Max) 68W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRFZ34NPBF is a N-channel MOSFET notable for its high efficiency and fast switching capabilities. It is designed for applications such as power management, motor control, and DC-DC converters. This device has a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) rating of 30A, making it suitable for medium to high-power applications.
Key specifications include a low on-resistance (R_DS(on)) of around 0.035 ohms, which minimizes power loss during operation. The MOSFET features a gate threshold voltage (V_GS(th)) of 2-4V, enabling it to be driven by low-voltage logic levels. Its TO-220 package allows for efficient heat dissipation, which is crucial for maintaining performance and reliability in demanding environments.
The IRFZ34NPBF is also RoHS compliant, making it an environmentally friendly choice for circuit designs. Overall, it is a versatile component ideal for various electronic applications requiring efficient power switching.

Features

The IRFZ34NPBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
- Voltage Rating: 55V maximum drain-source voltage (V_DS).
- Current Rating: Continuous drain current (I_D) of 30A, allowing for substantial load handling.
- On-Resistance: Low R_DS(on) of 0.035 ohms (at V_GS = 10V), which minimizes power loss during operation.
- Gate Threshold Voltage: V_GS(th) of 2-4V, suitable for logic-level drive compatibility.
- Package: Available in TO-220 and DPAK, facilitating easy integration into various circuits.
- Fast Switching: Capable of high-speed switching with low gate charge (Q_g), making it ideal for applications like motor control, power supplies, and DC-DC converters.
- Thermal Performance: Equipped for good thermal management with a high maximum junction temperature of 150°C.
Overall, the IRFZ34NPBF is excellent for power management applications requiring efficiency and reliability.

Package

The IRFZ34NPBF is packaged in a TO-220 format. This package type is designed for easy heat dissipation and is commonly used in power electronics applications.

Pinout

The IRFZ34NPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal where the current enters the MOSFET when it is in the on state. It is connected to the load in a switching application.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground in low-side switching configurations.
The IRFZ34NPBF is designed for high-efficiency power switching applications, featuring a maximum continuous drain current rating of 30A and a maximum drain-source voltage of 55V.

Manufacturer

The IRFZ34NPBF is manufactured by Infineon Technologies, a global semiconductor manufacturer based in Germany. Infineon specializes in a range of products, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company focuses on enabling energy efficiency, mobility, and security in various applications, serving industries such as automotive, industrial, communication, and consumer electronics. Infineon is known for its innovations in power management, making it a key player in the semiconductor market.

Application

The IRFZ34NPBF is an N-channel MOSFET primarily used in power management applications. Its key areas include switching power supplies, DC-DC converters, motor drivers, and audio amplifiers. It is also utilized in automotive applications, load switching, and high-efficiency circuits, thanks to its low on-resistance and high-speed switching capabilities.

Equivalent

The IRFZ34NPBF is an N-channel MOSFET. Equivalent products include:
1. STP34NF10
2. FQP34N10
3. AOD404
4. BSS138
5. IRFZ44N
Always verify the electrical specifications and ratings to ensure compatibility for your specific application.

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UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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