IRFU3607PBF

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IRFU3607PBF

MOSFET N-CH 75V 56A IPAK

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Spécifications

Supplier Rochester Electronics, LLC,Infineon Technologies
Package Bulk,Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 75 V
Current-ContinuousDrain(Id)@25°C 56A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 9mOhm @ 46A, 10V
Vgs(th)(Max)@Id 4V @ 100µA
GateCharge(Qg)(Max)@Vgs 84 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3070 pF @ 50 V
PowerDissipation(Max) 140W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage IPAK (TO-251AA)

Vue d'ensemble

Description

IRFU3607PBF is a specific type of integrated circuit or module, often used in various electronic applications. It’s designed to facilitate certain functionalities, such as signal processing or power management. The designation typically refers to its specific features, performance specifications, and form factor.
In the context of its usage, it may be part of larger systems in sectors like telecommunications, automotive, or consumer electronics. Understanding its pin configuration, electrical characteristics, and integration methods is crucial for engineers and developers looking to incorporate it into their designs. For optimal application, referring to the manufacturer's datasheet is essential, as it provides detailed information on its operational parameters, application notes, and performance benchmarks.
Overall, IRFU3607PBF represents a component that embodies advanced technology aimed at enhancing the performance and efficiency of electronic systems.

Features

The IRFU3607PBF is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Handling: The device can handle continuous drain currents up to 60A, providing robust performance for various power requirements.
3. Low Rds(on): It features a low on-resistance (Rds(on)) of approximately 9.5 mΩ at a gate-source voltage (Vgs) of 10V, which minimizes conduction losses and improves efficiency.
4. Fast Switching: The IRFU3607PBF offers fast switching speeds, making it ideal for applications like DC-DC converters and motor control.
5. Package: It comes in a TO-220 package, providing good thermal performance and ease of mounting on heat sinks.
6. Thermal Resistance: It has a low thermal resistance, allowing for effective heat dissipation under load.
Overall, the IRFU3607PBF is suitable for a range of power management applications, including automotive and industrial systems.

Package

The IRFU3607PBF is packaged in a surface-mount, TSOP-6 (Thin Small Outline Package) configuration. This compact package design is suitable for efficient space utilization on circuit boards.

Pinout

The IRFU3607PBF is a N-channel MOSFET with a total of 8 pins. Its primary functions include acting as a switch or amplifier in electronic circuits. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which current flows out when the device is on.
3. Source (S) - The terminal through which current enters when the device is conducting.
The remaining pins may be used for additional features or connections, depending on the specific application. This MOSFET is often utilized in power management, motor control, and various switching applications due to its low on-resistance and high-speed switching capabilities.

Manufacturer

The IRFU3607PBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in providing a wide range of semiconductor and system solutions, primarily focused on power management, automotive, industrial, and security applications. The company is known for its innovations in technologies such as power semiconductors, microcontrollers, and sensors. Infineon serves various industries, including automotive, industrial automation, communication, and consumer electronics, making it a key player in the global semiconductor market.

Application

IRFU3607PBF is a high-speed, high-frequency RF power transistor typically used in various applications such as:
1. RF Amplifiers – For communication systems, including cellular networks.
2. Broadcast Transmitters – In TV and radio broadcasting.
3. Radar Systems – Used in military and civilian radar applications.
4. Industrial RF Heating – For applications like microwave ovens and industrial heating processes.
5. Medical Equipment – In devices like MRI machines and diathermy units.
Its versatility makes it suitable for both commercial and industrial uses.

Equivalent

The IRFU3607PBF is a N-channel MOSFET. Equivalent products include the IRF3607, IRF3708, and STP75NF75. Always check the specific electrical characteristics, package type, and ratings to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire