IRFSL3206PBF

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IRFSL3206PBF

MOSFET N-CH 60V 120A TO262

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Spécifications

Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6540 pF @ 50 V
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number IRFSL3206

Vue d'ensemble

Description

The IRFSL3206PBF is a N-channel MOSFET designed for power switching applications. It features a low on-resistance (R_DS(on)) of 0.012 ohms, which allows for efficient current conduction and minimizes power loss. With a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of 120A, it is suitable for various applications, including power management and motor control.
This MOSFET is packaged in a compact DPAK (TO-252) package, facilitating easy mounting and thermal management. The IRFSL3206PBF is characterized by fast switching speeds and high thermal stability, making it ideal for high-frequency applications. Additionally, it is fully RoHS compliant, ensuring environmental safety.
Its enhanced performance and reliability make the IRFSL3206PBF a popular choice in automotive, industrial, and consumer electronics sectors. Overall, this device is an excellent option for designers looking to optimize power efficiency in their electronic systems.

Features

The IRFSL3206PBF is a N-channel MOSFET designed for various applications, such as power management, motor control, and DC-DC converters. Key features include:
1. Voltage Rating: 60V maximum drain-source voltage (V_DS).
2. Current Rating: Continuous drain current of 80A, enabling significant power handling.
3. R_DS(on): Low on-resistance of approximately 10 mΩ at V_GS = 10V, ensuring efficient conduction and reduced heat generation.
4. Gate Threshold Voltage: Gate-to-source threshold voltage (V_GS(th)) typically between 2V to 4V, facilitating easy drive with logic-level signals.
5. Package Type: Available in a TO-220 package, providing good thermal performance and ease of mounting.
6. Fast Switching: Designed for high-speed switching applications, reducing transition losses.
7. RoHS Compliant: Environmentally friendly design in compliance with RoHS standards.
These features make the IRFSL3206PBF suitable for a wide range of high-efficiency applications in both consumer and industrial electronics.

Package

The IRFSL3206PBF is packaged in a DPAK (also known as TO-252) form factor. This package type is designed for surface mounting and is commonly used for power MOSFETs, providing efficient thermal performance and space-saving attributes.

Pinout

The IRFSL3206PBF is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This is the control pin that turns the MOSFET on and off.
2. Drain (D): This pin connects to the load and is where the current flows out when the device is on.
3. Source (S): This pin is connected to ground or the negative side of the power supply.
The IRFSL3206PBF is designed for low on-resistance and high-speed switching applications, making it suitable for various power management tasks in circuits.

Manufacturer

The IRFSL3206PBF is manufactured by Infineon Technologies, a global leader in semiconductor solutions. Infineon specializes in providing a wide range of semiconductor products, including power semiconductors, microcontrollers, and sensors, primarily for automotive, industrial, and consumer applications. The company focuses on creating innovative technologies that enhance energy efficiency, safety, and connectivity in various electronic systems. Infineon is known for its commitment to quality and technological advancement, catering to diverse markets and industries worldwide.

Application

The IRFSL3206PBF is a N-channel MOSFET commonly used in low-voltage applications such as power management, DC-DC converters, motor drivers, and LED drivers. Its features make it suitable for high-efficiency applications in consumer electronics, automotive systems, and industrial equipment. Its low on-resistance and fast switching capabilities enhance performance in switching power supplies and load switching scenarios.

Equivalent

The IRFSL3206PBF is a N-channel MOSFET. Equivalent products include the NXP SiR320DP, STMicroelectronics STP16NF06, and Vishay Si4805BDY. Ensure to compare specifications such as voltage, current ratings, and RDS(on) for suitability in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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