IRFS4229TRLPBF

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IRFS4229TRLPBF

MOSFET N-CH 250V 45A D2PAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 250 V
Current-ContinuousDrain(Id)@25°C 45A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 48mOhm @ 26A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 110 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 4560 pF @ 25 V
PowerDissipation(Max) 330W (Tc)
OperatingTemperature -40°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TO263-3

Vue d'ensemble

Description

IRFS4229TRLPBF is a specific model of a surface mount Schottky diode manufactured by Vishay. This diode is designed for applications that require fast switching and low forward voltage drop, making it ideal for power management, rectification, and signal processing in various electronic circuits. The "IRFS" designation indicates it belongs to the family of MOSFETs or diodes from Vishay, while "4229" refers to its specific part number. The "TR" signifies that it is supplied in tape and reel packaging, suitable for automated assembly processes. The "LPBF" suffix indicates that it is lead-free, compliant with RoHS regulations, ensuring it meets environmental standards. With its robust performance characteristics, the IRFS4229TRLPBF is commonly used in power supplies, converters, and other high-frequency applications.

Features

The IRFS4229TRLPBF is an N-channel MOSFET designed for efficient power management. Key features include:
1. Voltage Rating: Max V_DS of 30V, suitable for low-voltage applications.
2. Current Handling: Continuous drain current (I_D) of 30A, allowing for robust performance in high-load scenarios.
3. R_DS(on): Low on-resistance (typically around 10 mΩ), which helps minimize power losses and thermal dissipation.
4. Gate Threshold Voltage: Low gate threshold (V_GS(th)), enabling easy drive with low input voltage.
5. Package: Available in a compact SO-8 package, facilitating space-efficient PCB designs.
6. Fast Switching Speed: High-speed switching capabilities suitable for applications like power supplies, motor drivers, and LED drivers.
7. Thermal Resistance: Good thermal performance, allowing for effective heat dissipation and reliable operation under varying environmental conditions.
These characteristics make the IRFS4229TRLPBF ideal for various applications in power management, including DC-DC converters and power switching.

Package

The IRFS4229TRLPBF is packaged in a TO-220 style casing. This package type allows for efficient thermal management and is commonly used in power applications.

Pinout

The IRFS4229TRLPBF is a N-channel MOSFET with a pin count of 8. Its primary functions include acting as a switch or amplifier in various electronic applications, particularly in power management and motor control circuits. The device features low on-resistance, which helps improve efficiency.
The pin configuration is as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - Connects to the load; the output side of the switch.
3. Source (S) - The common terminal; connects to ground in most applications.
4. Drain (D) - Additional drain pin for better current handling (in some configurations).
5. Source (S) - Additional source pin for better current handling (in some configurations).
6. N/C - No connection.
7. N/C - No connection.
8. N/C - No connection.
The IRFS4229TRLPBF is suitable for applications requiring high-speed switching and efficient power management.

Manufacturer

The manufacturer of the IRFS4229TRLPBF is Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in automotive, industrial power, and digital security solutions. The company designs and produces a wide range of products, including power management ICs, microcontrollers, and sensors, aimed at enhancing energy efficiency and performance in various applications. Infineon serves diverse sectors, including automotive, industrial, communications, and consumer electronics, and is known for its innovation in power semiconductors and system solutions.

Application

The IRFS4229TRLPBF is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor control, and switch-mode power supplies. Its features make it suitable for high-efficiency designs in consumer electronics, telecommunications, and automotive systems. Its low on-resistance and fast switching capabilities enhance performance in various power applications.

Equivalent

The IRFS4229TRLPBF is an N-channel MOSFET. Equivalent products include the Fairchild FDD844N, Vishay SiR404DP, and the Infineon BSC027N06NS. Always verify specifications like voltage, current ratings, and RDS(on) to ensure compatibility with your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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