IRFR9110TRL

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IRFR9110TRL

MOSFET P-CH 100V 3.1A DPAK

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  • Mfr. Partie #IRFR9110TRL
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Spécifications

Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number IRFR9110

Vue d'ensemble

Description

IRFR9110TRL is a high-performance, low-voltage N-channel MOSFET designed for various applications in power management, including switching regulators and motor drivers. It features low on-resistance, fast switching speeds, and a compact package, which enhance efficiency and reduce thermal management challenges in electronic systems. The device is suitable for both automotive and industrial applications due to its reliability and robustness.
Key specifications often include a maximum drain-source voltage (V_DS) of around 30V, with a continuous drain current (I_D) typically exceeding 50A. Additionally, it has a high gate threshold voltage, ensuring stable operation in challenging environments. The IRFR9110TRL is notable for its thermal performance, enabling better heat dissipation in compact layouts.
In summary, the IRFR9110TRL is an essential component for modern electronic designs requiring efficient power management solutions.

Features

The IRFR9110TRL is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 100V, making it suitable for various power applications.
2. Current Handling: The device supports continuous drain current (Id) up to 50A, allowing it to handle significant loads in power circuits.
3. Low Rds(on): It offers a low on-resistance (Rds(on)) typically around 0.045 ohms, which minimizes power loss and improves efficiency.
4. Fast Switching: The MOSFET is capable of fast switching speeds, which is beneficial for high-frequency applications.
5. Thermal Performance: It comes in a TO-220 package, providing good thermal management for high-power dissipation.
6. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is typically between 1V to 2V, enabling efficient control with low drive voltages.
These features make the IRFR9110TRL suitable for use in applications like power supplies, motor drivers, and other high-performance switching applications.

Package

The IRFR9110TRL is packaged in a TO-220 form factor. This type of package is designed for efficient heat dissipation and is commonly used for power MOSFETs in various applications.

Pinout

The IRFR9110TRL is a N-channel MOSFET with a total of 8 pins.
Pin Functions:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): Connects to the load; current flows from drain to source when the MOSFET is on.
3. Source (S): Common terminal for current flow; typically connected to ground in low-side switching applications.
4. Body Diode: Internal structure providing reverse current capability.
The device is designed for high-efficiency applications and can handle a maximum drain-source voltage (V_DS) of 100V, with a continuous drain current (I_D) of 35A. It features low on-resistance (R_DS(on)) for enhanced performance in power management applications. The IRFR9110TRL is commonly used in DC-DC converters, motor drivers, and other switching applications.

Manufacturer

The IRFR9110TRL is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon is known for its expertise in power semiconductors, microcontrollers, and sensors, serving various industries such as automotive, industrial, and consumer electronics. The company focuses on providing innovative solutions for energy efficiency, mobility, and security. Infineon is recognized for its commitment to sustainability and technological advancement in the semiconductor field.

Application

IRFR9110TRL is a N-channel MOSFET primarily used in power management applications. Common application areas include DC-DC converters, power supplies, motor control, and battery management systems. Its high efficiency and low on-resistance make it suitable for automotive, industrial, and consumer electronic devices where reliable and efficient power switching is essential.

Equivalent

The IRFR9110TRL is an N-channel MOSFET. Equivalent products include:
1. IRF540N
2. IRF320
3. AOD4184
4. STP16NF06
5. PNM6006
Ensure to check specifications like voltage, current, and RDS(on) for compatibility in specific applications.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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