IRFR3710ZTRPBF

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IRFR3710ZTRPBF

MOSFET N-CH 100V 42A DPAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 42A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 18mOhm @ 33A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 100 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2930 pF @ 25 V
PowerDissipation(Max) 140W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D-Pak

Vue d'ensemble

Description

IRFR3710ZTRPBF is a part number that typically refers to a specific electronic component, likely a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by International Rectifier, now part of Infineon Technologies. This component is designed for power management applications, providing efficient switching capabilities essential in various electronic circuits, including power supplies, motor drivers, and inverters.
The "IR" prefix indicates the manufacturer, while the subsequent numbers and letters denote specific features such as voltage rating, package type, and other technical specifications. This component is valued for its low on-resistance, fast switching speed, and reliability, making it suitable for high-performance applications.
Understanding the datasheet for IRFR3710ZTRPBF is crucial for engineers and designers, as it provides essential information on electrical characteristics, thermal performance, and application guidelines to ensure optimal integration into electronic designs.

Features

The IRFR3710ZTRPBF is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Offers a continuous drain current (I_D) of up to 85A, making it suitable for high-current applications.
3. R_DS(on): The on-resistance is low, typically around 0.008 ohms at V_GS = 10V, which enhances efficiency and reduces power losses.
4. Gate Threshold Voltage: The V_GS(th) is in the range of 1-2.5V, enabling operation with lower gate drive voltages.
5. Package Type: Available in a TO-220 package, which facilitates heat dissipation and ease of mounting.
6. Fast Switching: Designed for fast switching applications, contributing to improved performance in power management.
7. Applications: Suitable for use in power supplies, motor drives, and other high-frequency switching applications.
Overall, the IRFR3710ZTRPBF combines high performance and reliability, making it a popular choice in various electronic designs.

Package

The IRFR3710ZTRPBF is packaged in a TO-220 form factor. This type of package is designed for high-power applications, providing efficient heat dissipation and robust performance in various electronic circuits.

Pinout

The IRFR3710ZTRPBF is a N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's switching; applying a voltage here allows the current to flow from the drain to the source.
2. Drain (D): The current flows out of this pin when the MOSFET is on.
3. Source (S): Current enters through this pin when the MOSFET is in the on state.
This MOSFET is commonly used in power applications due to its low on-resistance and fast switching capabilities.

Manufacturer

The IRFR3710ZTRPBF is manufactured by Infineon Technologies AG, a multinational semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in semiconductor solutions for various applications, including automotive, industrial power, and security technologies. The company is known for its expertise in power management, microcontrollers, sensors, and connectivity solutions. Infineon plays a crucial role in enabling energy efficiency and innovation across multiple sectors, making it a key player in the global semiconductor industry.

Application

The IRFR3710ZTRPBF is an N-channel MOSFET commonly used in power management applications, including DC-DC converters, power supplies, and motor control. Its low on-resistance and fast switching capabilities make it suitable for efficient power switching in renewable energy systems, electric vehicles, and industrial automation. Additionally, it can be used in audio amplifiers and other consumer electronics requiring efficient power handling.

Equivalent

The IRFR3710ZTRPBF is an N-channel MOSFET. Equivalent products include:
1. IRF3708
2. IRF3710
3. STP55NF06L
4. FDPF55N06
5. BSS123 (for lower voltage applications)
Always verify specifications like voltage, current, and RDS(on) before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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