IRFR3710ZPBF

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IRFR3710ZPBF

MOSFET N-CH 100V 42A DPAK

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 42A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 18mOhm @ 33A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 100 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2930 pF @ 25 V
PowerDissipation(Max) 140W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D-Pak

Vue d'ensemble

Description

IRFR3710ZPBF is a component identifier, specifically referring to a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. It is designed for applications requiring efficient switching capabilities, such as power management in electronic devices. This component is notable for its low on-resistance, high-speed switching, and robustness, making it suitable for use in power supplies, motor control, and other high-performance applications.
The "IR" in the name signifies Infineon’s International Rectifier brand, known for high-performance power semiconductor products. The "3710" part typically indicates the specific model, while "ZPBF" denotes the packaging and environmental compliance, specifically indicating that it is lead-free, which aligns with RoHS standards for reducing hazardous substances.
Overall, IRFR3710ZPBF is a critical component in modern electronics, facilitating efficient power conversion and management in various applications.

Features

The IRFR3710ZPBF is a N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: The continuous drain current (I_D) is rated at 62A, allowing it to handle significant loads.
3. On-Resistance (R_DS(on)): It boasts a low on-resistance of approximately 10 mΩ at a gate-source voltage (V_GS) of 10V, which enhances efficiency by minimizing power losses.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage is between 2.0V to 4.0V, enabling efficient switching.
5. Package Type: Available in a TO-220 package, facilitating easy thermal management and PCB mounting.
6. Fast Switching: Designed for fast switching speeds, making it suitable for applications in power supplies, motor drives, and other high-efficiency circuits.
7. RoHS Compliant: It adheres to environmental standards, ensuring safety in electronics manufacturing.
Overall, the IRFR3710ZPBF is ideal for various power management applications due to its robust performance characteristics.

Package

The IRFR3710ZPBF is packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used for power transistors and MOSFETs in various applications.

Manufacturer

The IRFR3710ZPBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer based in Germany. Infineon specializes in producing a wide range of semiconductor solutions, including power management, automotive electronics, and microcontrollers. The company focuses on technologies that enhance energy efficiency, safety, and connectivity, catering to various industries such as automotive, industrial, and consumer electronics. Infineon is known for its innovative products that support the transition to a more sustainable and connected world.

Application

The IRFR3710ZPBF is an N-channel MOSFET primarily used in power management applications, such as DC-DC converters, power supplies, and motor drivers. Its low on-resistance and high-speed switching capabilities make it suitable for automotive, industrial, and consumer electronics applications, enhancing efficiency and thermal performance in various circuits.

Equivalent

The IRFR3710ZPBF is an N-channel MOSFET. Equivalent products include:
1. IRF3710 - Similar specifications from the same manufacturer.
2. STP75NF75 - Comparable performance in similar applications.
3. FQP30N20 - Another suitable N-channel MOSFET option.
4. BSS138 - For lower power applications, though with different ratings.
Always check the datasheets for specific ratings and characteristics to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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