IRFR220TRPBF

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IRFR220TRPBF

MOSFET N-CH 200V 4.8A DPAK

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Spécifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number IRFR220

Vue d'ensemble

Description

IRFR220TRPBF is an integrated circuit (IC) designed for high-frequency applications, specifically tailored for RF and microwave communications. This device typically functions as a RF amplifier or a switching component, enabling signal amplification and processing in various electronic systems.
Key features often include low noise figure, high gain, and efficient power output, making it suitable for use in wireless communication, radar systems, and other applications requiring reliable signal transmission. The "TRPBF" suffix indicates that it is lead-free and compliant with RoHS standards, emphasizing its eco-friendliness.
When utilizing IRFR220TRPBF, engineers must consider parameters such as power supply voltage, input and output impedance, and thermal management to ensure optimal performance in intended applications. Overall, this component is essential for enhancing the capability and efficiency of modern communication technologies.

Features

The IRFR220TRPBF is a N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for various power management applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 22A, which is beneficial for driving loads.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.035 ohms at 10V gate voltage, enhancing efficiency and reducing heat generation during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing it to be driven easily by low-voltage logic.
5. Package Type: It is available in a TO-220 package, facilitating easy heat dissipation.
6. Fast Switching: Designed for fast switching speeds, making it ideal for applications such as DC-DC converters and motor control.
Overall, the IRFR220TRPBF is an efficient and reliable choice for power electronic circuits.

Package

The IRFR220TRPBF is packaged in a TO-220 type package. This package type is designed for efficient thermal dissipation and is commonly used for power MOSFETs in various applications.

Pinout

The IRFR220TRPBF is an N-channel MOSFET with a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit.
4. Body Diode: While not a separate pin, the IRFR220TRPBF has an internal body diode between the drain and source, allowing current to flow in the reverse direction when needed.
This device is commonly used in power management applications due to its efficient switching capabilities and high current handling.

Manufacturer

The IRFR220TRPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Germany. Infineon specializes in developing and producing a wide range of semiconductor solutions for various applications, including automotive, industrial, communication, and consumer electronics. The company is known for its focus on innovation in power management, automotive safety, and sensor technologies. Infineon Technologies plays a significant role in the automotive and industrial sectors, providing products that enhance energy efficiency and performance.

Application

The IRFR220TRPBF is an N-channel MOSFET commonly used in applications such as power management, switching power supplies, motor control, and DC-DC converters. Its low on-resistance and fast switching capabilities make it suitable for efficient power handling in consumer electronics, automotive systems, and industrial automation.

Equivalent

The IRFR220TRPBF is a N-channel MOSFET. Equivalent products include:
1. IRF320 - Similar voltage and current ratings.
2. STP16NF06 - Comparable specifications for power applications.
3. FQP30N06L - Matches performance in switching applications.
4. BSS123 - Suitable for lower power applications but may vary in ratings.
Always verify specifications for your specific application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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