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IRFR110TRPBF
MOSFET N-CH 100V 4.3A DPAK
- Fabricant
- Mfr. Partie #IRFR110TRPBF
- Paquet
- Fiche de données IRFR110TRPBF DataSheet
- En stock6197
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Spécifications
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 2.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | IRFR110 |
Vue d'ensemble
Description
Key features of the IRFR110TRPBF include:
1. Voltage and Current Ratings: It typically operates at high voltage and current levels, making it suitable for controlling larger loads.
2. Enhancement Mode: The device is usually an N-channel enhancement mode MOSFET, meaning it requires a positive gate-source voltage to conduct.
3. Low On-Resistance: It offers low resistance when in the "on" state, reducing power loss and increasing efficiency.
4. Ruggedness: Known for reliability and ability to handle high power pulses.
These characteristics make the IRFR110TRPBF ideal for use in power supply applications, motor controllers, and other areas requiring efficient power switching. Always refer to the datasheet for detailed specifications and application guidelines.
Features
1. N-channel MOSFET: It is an N-channel device, which is typically used for high-speed switching applications.
2. Voltage and Current Ratings: The device supports a drain-to-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 3.6A at 25°C.
3. R_DS(on): The on-resistance is low, approximately 0.28 ohms, enabling efficient performance with minimal power loss.
4. Package: It comes in a D-Pak (TO-252) surface-mount package, which is conducive to automated assembly and suited for compact PCB layouts.
5. Temperature Range: The operating junction temperature range is from -55°C to 175°C, making it suitable for a wide range of environmental conditions.
6. Fast Switching: The MOSFET is designed for fast switching, which is beneficial in applications requiring high efficiency and performance.
7. RoHS Compliant: It is lead-free and RoHS compliant, aligning with environmental regulations.
These features make the IRFR110TRPBF suitable for use in power management, DC-DC converters, and motor control applications.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied here allows current to flow between the drain and source.
2. Drain (D): This pin is the output of the MOSFET, where the current flows out from the device when it is turned on.
3. Source (S): This pin is the input of the MOSFET, where the current flows into the device.
Additionally, the tab on the DPAK package is typically connected to the drain, providing a path for heat dissipation. The IRFR110TRPBF is used in various applications requiring efficient switching and power management.
Manufacturer
Application
Equivalent
Expédition
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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.
UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.
TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.
EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.
Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.
Paiements
Payment Methods
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