IRFPS37N50A

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IRFPS37N50A

MOSFET N-CH 500V 36A SUPER247

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  • Mfr. Partie #IRFPS37N50A
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Spécifications

Part Status Obsolete
Base Product Number IRFPS37
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 5579 pF @ 25 V
Power Dissipation (Max) 446W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package SUPER-247™ (TO-274AA)
Package TO-274AA
Packaging Tube

Vue d'ensemble

Description

The IRFPS37N50A is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high voltage applications. It features a maximum drain-source voltage (V_DS) of 500V, a continuous drain current (I_D) of 37A, and a low on-resistance (R_DS(on)) of approximately 0.75 ohms, which helps in reducing power loss during operation. This device is commonly used in power supply circuits, motor control, and switching applications due to its efficiency and reliability.
The IRFPS37N50A has a fast switching speed, making it suitable for high-frequency applications. It is typically housed in a TO-220 package, allowing for better thermal management and easier heat dissipation. Its gate threshold voltage (V_GS(th)) ranges from 2V to 4V, facilitating low-voltage drive capabilities.
Overall, the IRFPS37N50A is ideal for engineers looking for a robust component for high-voltage, high-current designs in various electronic applications.

Features

The IRFPS37N50A is a N-channel MOSFET designed for high-performance applications. Its key features include:
1. Voltage Rating: 500V, making it suitable for high voltage applications.
2. Current Rating: Continuous drain current of 37A, allowing it to handle significant loads.
3. Low RDS(on): Typically 0.47 ohms (at VGS = 10V), which minimizes conduction losses and enhances efficiency.
4. Fast Switching: Capable of high-speed switching, beneficial for applications such as power supplies and motor control.
5. Gate Threshold Voltage (VGS(th)): Typically between 2-4V, enabling efficient control with low drive voltages.
6. Robust Construction: Designed for high reliability in demanding environments.
7. Package Type: Available in TO-220 package, which allows for easy heat dissipation.
These features make the IRFPS37N50A suitable for applications in power converters, inverters, and other high-voltage switching circuits.

Package

The IRFPS37N50A is packaged in a TO-220 format. This package type provides good thermal performance and is commonly used for power MOSFETs, allowing for efficient heat dissipation in various applications.

Pinout

The IRFPS37N50A is a N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows the device to conduct between the drain and source terminals.
2. Drain (D): This is the terminal where the current enters the MOSFET from the load.
3. Source (S): This terminal is where the current exits the MOSFET to the circuit ground or supply.
The IRFPS37N50A is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) up to 37A. It is commonly used in power switching applications, such as in power supplies, motor drives, and other industrial circuits.

Manufacturer

The IRFPS37N50A is manufactured by Infineon Technologies, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in providing semiconductor and system solutions for various applications, including automotive, industrial electronics, and communication technologies. The company focuses on innovation in power semiconductors, microcontrollers, and sensors, serving a wide range of industries, including automotive, industrial, and consumer electronics. Infineon is recognized for its commitment to sustainability and energy efficiency in its products.

Application

The IRFPS37N50A is a high-voltage N-channel MOSFET commonly used in applications such as power supplies, motor control, and high-frequency switching. Its features make it suitable for use in DC-DC converters, inverters, and various electronic devices requiring efficient power management. Additionally, it is utilized in automotive applications and renewable energy systems like solar inverters.

Equivalent

The IRFPS37N50A is a 500V N-channel MOSFET. Equivalent products include:
1. STP37NF50
2. MTP37N50
3. FQP37N50
4. NKT50N50
5. IRF3710
Always check datasheets for specifications like RDS(on) and gate charge to ensure compatibility for your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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