IRFP460PBF

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IRFP460PBF

MOSFET N-CH 500V 20A TO247AC

  • Fabricant
  • Mfr. Partie #IRFP460PBF
  • Paquet TO-247-3
  • Fiche de données
  • En stock4331

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Last Time Buy
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V
Current-ContinuousDrain(Id)@25°C 20A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 270mOhm @ 12A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 210 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4200 pF @ 25 V
PowerDissipation(Max) 280W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Vue d'ensemble

Description

The IRFP460PBF is a high-power N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in various applications such as power management, motor control, and switching power supplies. It features a maximum drain-source voltage (V_ds) of 60V and a continuous drain current (I_d) of up to 30A, making it suitable for high-efficiency and high-performance applications.
Key specifications include a low on-resistance (R_ds(on)) of approximately 0.18 ohms at a gate-to-source voltage (V_gs) of 10V, which helps minimize power loss during operation. The IRFP460PBF also has a fast switching speed, allowing for efficient operation in high-frequency applications.
Its robust construction and thermal performance enable it to handle significant power without overheating. The device is often packaged in a TO-220 form factor, facilitating easy heat dissipation and integration into various circuits. Overall, the IRFP460PBF is a versatile and reliable choice for engineers designing power-related applications.

Features

The IRFP460PBF is an N-channel power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: Maximum gate-to-source voltage (Vgs) of ±20V and a drain-to-source voltage (Vds) of 500V.
2. Current Rating: Continuous drain current (Id) of 20A at 25°C, with a pulsed current capability of up to 80A.
3. RDS(on): Low on-resistance (RDS(on)) typically around 0.27 ohms, which minimizes power loss during operation.
4. Gate Charge: Low total gate charge (Qg) of approximately 71 nC, facilitating fast switching speeds.
5. Thermal Performance: High thermal stability with a maximum junction temperature (Tj) of 150°C.
6. Package: Available in TO-220 and DPAK packages, providing ease of mounting and good heat dissipation.
These features make the IRFP460PBF suitable for various applications, including power supplies, inverters, and motor control systems.

Package

The IRFP460PBF is packaged in a TO-220 form factor, which is a metal tab package designed for efficient heat dissipation in power applications.

Pinout

The IRFP460PBF is a N-channel MOSFET with a pin count of 3. The function of each pin is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source terminals.

2. Drain (D): This pin is the output terminal where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It is the terminal through which current exits the device.
The IRFP460PBF is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) rating of 20A. It is commonly used in power electronics, including switch-mode power supplies and motor control circuits.

Manufacturer

The IRFP460PBF is manufactured by Infineon Technologies, a global leader in semiconductor solutions. Infineon is a German company that specializes in designing and manufacturing a wide range of semiconductor products, including power semiconductors, microcontrollers, and sensors. They serve various industries, including automotive, industrial, and consumer electronics, focusing on efficiency, reliability, and innovation in their technologies. Infineon's products are widely used in applications such as renewable energy, electric vehicles, and smart devices, contributing to advancements in sustainability and digitalization.

Application

The IRFP460PBF is a high-power MOSFET commonly used in applications such as power supplies, motor drives, and inverter circuits. It is suitable for high-voltage and high-current switching applications, including industrial equipment, renewable energy systems (like solar inverters), and amplifiers. Its fast switching speed and low on-resistance make it ideal for efficient power conversion and control.

Equivalent

Equivalent products to the IRFP460PBF include the IRFP460, STP46NF06, FQA46N06, and MTP46N06. These MOSFETs have similar voltage ratings (around 60V) and current capabilities (up to 30A). Always check specific datasheets for exact parameters and thermal characteristics before substitution.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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