IRFP4332PBF

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IRFP4332PBF

MOSFET N-CH 250V 57A TO247AC

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 250 V
Current-ContinuousDrain(Id)@25°C 57A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 33mOhm @ 35A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 150 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 5860 pF @ 25 V
PowerDissipation(Max) 360W (Tc)
OperatingTemperature -40°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Vue d'ensemble

Description

The IRFP4332PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It features a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of up to 120A, making it suitable for various power management tasks, including motor drives, power converters, and inverters.
Key specifications include a low on-resistance (R_DS(on)) of approximately 0.025Ω, which minimizes conduction losses and enhances thermal performance. The device is housed in a TO-220 package, allowing for easy heat dissipation. It also has a fast switching speed, which improves efficiency in high-frequency applications.
The IRFP4332PBF is characterized by its robustness and reliability, with a maximum junction temperature of 175°C. It is often used in automotive, industrial, and renewable energy systems. Overall, the IRFP4332PBF is valued for its performance in demanding electronic environments.

Features

The IRFP4332PBF is a N-channel MOSFET optimized for high-performance applications. Key features include:
1. Voltage Rating: Maximum Drain-Source Voltage (V_DS) of 100V, suitable for a variety of applications.
2. Current Rating: Continuous Drain Current (I_D) of 50A, capable of handling significant loads.
3. On-Resistance: Low R_DS(on) typically around 0.045 ohms, ensuring minimal power loss during operation.
4. Gate Threshold Voltage: V_GS(th) range of 2V to 4V, enabling efficient driving from low-voltage logic levels.
5. Fast Switching Speed: Designed for high-speed switching applications, improving efficiency in circuits.
6. Package Type: Available in TO-220 package, suitable for through-hole mounting and effective thermal management.
7. Thermal Resistance: Low thermal resistance helps manage heat dissipation during operation.
These features make the IRFP4332PBF ideal for applications in power supplies, motor drivers, and automotive systems.

Package

The IRFP4332PBF is typically packaged in a TO-220 form factor. This package type features a metal tab for improved heat dissipation and is commonly used for high-power applications.

Pinout

The IRFP4332PBF is an N-channel MOSFET with a total of 6 pins. Its pin configuration and functions are as follows:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The terminal through which the load current flows out of the MOSFET.
3. Source (S): The terminal through which the load current enters the MOSFET.
4. Tab/Case: Often used for heat dissipation and may also be connected to the Source in some packages.
The IRFP4332PBF is designed for high-speed switching applications and can handle high voltages and currents, making it suitable for power management, motor drives, and various power conversion applications. It typically features low on-resistance, which enhances efficiency in power applications.

Manufacturer

The IRFP4332PBF is manufactured by Infineon Technologies AG, a multinational semiconductor manufacturer based in Germany. Infineon specializes in developing a wide range of semiconductor products, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company is known for its focus on innovation in areas such as energy efficiency, mobility, and security. Infineon serves various markets, including automotive, industrial, and consumer electronics, and is recognized for its commitment to sustainability and advanced technology solutions.

Application

The IRFP4332PBF is a N-channel MOSFET used in various applications, including power management, motor control, DC-DC converters, and switching power supplies. It is suitable for high-efficiency designs in renewable energy systems, automotive applications, and industrial automation due to its low on-resistance and high-speed switching capabilities.

Equivalent

The IRFP4332PBF is a power MOSFET with specific characteristics. Equivalent products include:
1. STP55NF06L
2. FQD14N20
3. AOD7N60
4. BSS123
Always verify specifications such as voltage, current, and RDS(on) to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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