IRFP4227PBF

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IRFP4227PBF

IRFP4227 - 12V-300V N-CHANNEL PO

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Spécifications

Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 65A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 25mOhm @ 46A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 98 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 4600 pF @ 25 V
PowerDissipation(Max) 330W (Tc)
OperatingTemperature -40°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Vue d'ensemble

Description

The IRFP4227PBF is a N-channel MOSFET designed for high-efficiency power applications. It features a low on-resistance (R_DS(on)) of approximately 0.025 ohms, allowing for reduced power loss and improved thermal performance. With a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) rating of up to 70A, it is suitable for various applications, including power management, motor control, and DC-DC converters.
The device has a robust thermal performance, with a maximum junction temperature of 150°C. Its fast switching capabilities make it ideal for high-frequency applications. The IRFP4227PBF is packaged in a TO-220 form factor, providing efficient heat dissipation and ease of mounting. The part is RoHS compliant, ensuring it meets environmental standards.
Overall, the IRFP4227PBF is a versatile and reliable choice for designers looking to enhance the efficiency and performance of their electronic systems.

Features

The IRFP4227PBF is an N-channel MOSFET from Infineon Technologies, designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V.
2. Current Rating: Continuous drain current (I_D) is rated at 89A, making it suitable for high-current applications.
3. R_DS(on): Low on-resistance (R_DS(on)) of approximately 9.5 mΩ at V_GS = 10V, which helps reduce conduction losses.
4. Gate Threshold Voltage: Gate threshold voltage (V_GS(th)) ranges from 2 to 4V, ensuring compatibility with low-voltage drive circuits.
5. Fast Switching: Designed for fast switching, enhancing efficiency in power conversion applications.
6. Thermal Resistance: Low thermal resistance ensures effective heat dissipation, contributing to reliability.
7. Packages: Available in a TO-220 package, suitable for heatsinking and mounting in power applications.
These features make the IRFP4227PBF ideal for use in power supplies, motor drives, and other high-efficiency switching applications.

Package

The IRFP4227PBF is packaged in a TO-220 style casing. This package type is commonly used for power MOSFETs, providing efficient heat dissipation and mounting versatility.

Pinout

The IRFP4227PBF is an N-channel Mosfet with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the switching of the Mosfet. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D): This is the terminal through which the main current flows out of the Mosfet when it is turned on.
3. Source (S): This is the terminal where the current enters the Mosfet.
The IRFP4227PBF is designed for power applications and features a high voltage rating, low on-resistance, and fast switching capabilities, making it suitable for use in various circuits, including power supplies and motor drivers.

Manufacturer

The IRFP4227PBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company is known for its innovations in power management and efficiency, particularly in applications such as automotive systems, industrial automation, and renewable energy. Infineon operates in various sectors, including automotive, industrial power control, and security technologies, making it a key player in the global semiconductor market.

Application

The IRFP4227PBF is a N-channel MOSFET used in various applications, including power supplies, motor control, and DC-DC converters. Its high voltage and current ratings make it suitable for industrial automation, automotive systems, and renewable energy systems like solar inverters. Additionally, it is commonly used in audio amplifiers and power management circuits for efficient switching and amplification.

Equivalent

The IRFP4227PBF is an N-channel MOSFET with specific characteristics. Equivalent products include the STP16NF06, FQD16N06L, and the AUIRF4227. When selecting replacements, ensure compatibility in voltage ratings, current ratings, Rds(on), and package type to ensure proper functionality in your application. Always consult the datasheets for precise specifications.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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