IRFP360

Les images sont à titre de référence seulement

IRFP360

MOSFET N-CH 400V 23A TO247-3

  • Fabricant
  • Mfr. Partie #IRFP360
  • Paquet
  • Fiche de données
  • En stock7123

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Supplier Vishay Siliconix
Package Tube
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 400 V
Current-ContinuousDrain(Id)@25°C 23A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 200mOhm @ 14A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 210 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4500 pF @ 25 V
PowerDissipation(Max) 280W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Vue d'ensemble

Description

IRFP360 is a high-voltage N-channel power MOSFET from International Rectifier (now Infineon). It’s used in switching power supplies, inverters, and motor drives where a robust, fast-switching device is needed.
Key points:
- Type: N-channel enhancement-mode MOSFET.
- Rating focus: high drain–source voltage (around 200 V class) with a few amperes of continuous current depending on package and cooling.
- On-resistance: relatively low, but not a “logic-level” device; full enhancement typically requires ~10–12 V gate drive.
- Gate drive: avoid 5 V for full conduction; drive with proper gate drive circuitry and gate resistors.
- Packaging: common power packages such as TO-220 or similar D2PAK variants.
- Use notes: requires adequate heat sinking, and attention to SOA, avalanche, and protection (snubbers, flyback diodes, dead-time) in inductive loads.
For exact electrical ratings and package options, consult the official datasheet.

Features

Key features of IRFP360 (N‑channel power MOSFET):
- N‑channel enhancement‑mode power MOSFET
- VDS: 200 V
- Continuous ID: around 8 A (typical)
- RDS(on): typically under 1 Ω (roughly 0.8 Ω, max around 1.5 Ω)
- Gate drive: VGS(th) ~2–4 V; 10 V drive recommended for lowest RDS(on)
- Fast switching with low input capacitance and low Qg
- Robust avalanche energy rating for rugged switching
- Package: through‑hole TO‑220AB (also available in other variants)
- Wide operating temperature: typically −55 °C to +150 °C
- Applications: high‑voltage switching regulators, DC‑DC converters, motor control, inverters
Note: exact numbers can vary by lot and package variant; consult the datasheet for precise specifications.

Package

The IRFP360 is an N-channel power MOSFET typically supplied in a TO-220 (TO-220AB) three-lead through-hole power package. Check the manufacturer's datasheet for exact outlines and any variants.

Pinout

The IRFP360 is an N‑channel power MOSFET with 3 external pins. Their functions are:
- Pin 1: Gate (G) — control electrode that turns the MOSFET on/off.
- Pin 2: Drain (D) — power input/output; usually the center lead and the metal tab/heatsink are electrically tied to the drain.
- Pin 3: Source (S) — return/reference terminal for the device.
(Typical front-view pin order for TO‑247/TO‑220 packages: Gate, Drain, Source; metal tab = Drain.)

Manufacturer

The IRFP360 is an N‑channel power MOSFET originally manufactured by International Rectifier (IR). International Rectifier was an American semiconductor company specializing in power-management products and discrete power semiconductors (power MOSFETs, IGBTs, drivers). In 2015 IR was acquired by Infineon Technologies, a German semiconductor firm that now supplies many IR-branded power devices.

Application

IRFP360 is a high‑voltage N‑channel power MOSFET. Common application areas:
- Offline/high‑voltage switching power supplies (SMPS)
- DC–DC converters and regulator stages
- Power inverters and motor‑drive/PWM stages
- Solar/battery power conditioning and UPS systems
- Class D audio amplifiers and other high‑speed switching topologies
- Pulsed‑power, induction heating and related high‑voltage switching tasks

Equivalent

I can help, but need the IRFP360 specs you require (Vds, Id, Rds(on), package, switching speed, application). Provide those and I’ll list suitable equivalent MOSFET part numbers.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire