IRFP3306PBF

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IRFP3306PBF

MOSFET N-CH 60V 120A TO247AC

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Spécifications

Series HEXFET®
Part Status Last Time Buy
Base Product Number IRFP3306
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4520 pF @ 50 V
Power Dissipation (Max) 220W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package TO-247-3
Packaging Tube

Vue d'ensemble

Description

The IRFP3306PBF is a high-performance N-channel MOSFET designed for various power switching applications. With a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of 95A, it is suitable for high-efficiency power management. The device features a low on-resistance (R_DS(on)) of approximately 0.04 ohms at a gate-source voltage (V_GS) of 10V, allowing for minimal power loss during operation.
This MOSFET is particularly advantageous in applications such as DC-DC converters, motor drives, and power inverters due to its fast switching capabilities and thermal stability. The IRFP3306PBF is housed in a TO-220 package, facilitating easy heat dissipation and integration into various circuit designs.
Additionally, it is RoHS compliant, making it environmentally friendly. Overall, the IRFP3306PBF is an excellent choice for projects requiring robust and efficient power switching solutions.

Features

The IRFP3306PBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 60V.
2. Current Rating: It can handle a continuous drain current (Id) of up to 100A, making it suitable for high-power applications.
3. Rds(on): The on-resistance is low at around 4.2 mΩ (at Vgs = 10V), which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) is in the range of 2-4V, allowing for efficient driving with low gate voltages.
5. Package: Available in a TO-220 package, providing good thermal performance.
6. Fast Switching: It supports fast switching speeds, making it suitable for applications such as motor control, power supplies, and DC-DC converters.
7. Thermal Resistance: Features low thermal resistance, enhancing its reliability under high loads.
Overall, the IRFP3306PBF is ideal for applications requiring robust performance in power management and switching.

Package

The IRFP3306PBF is packaged in a TO-220 form factor, which is a standard package for power MOSFETs. This package provides efficient heat dissipation and is suitable for high-power applications.

Pinout

The IRFP3306PBF is a N-channel MOSFET with a total of 3 pins. The pin configuration and functions are as follows:
1. Gate (G): This pin controls the MOSFET. It receives the input voltage to turn the device on or off.
2. Drain (D): This pin is where the load current enters the MOSFET. It connects to the positive side of the load.
3. Source (S): This pin is where the load current exits the MOSFET. It is typically connected to ground or the negative side of the circuit.
The IRFP3306PBF is designed for applications such as power management, motor control, and switching circuits, supporting high voltage and current levels. Its specifications typically include a maximum drain-source voltage (V_DS) of 60V and continuous drain current (I_D) of 110A.

Manufacturer

The IRFP3306PBF is manufactured by Infineon Technologies, a global semiconductor company based in Germany. Infineon specializes in semiconductor solutions for various applications, including automotive, industrial, and power management. The company focuses on innovation in areas such as power efficiency, connectivity, and security. Infineon is known for its expertise in power semiconductors, particularly MOSFETs and IGBTs, which are used in a wide range of electronic devices and systems.

Application

The IRFP3306PBF is an N-channel MOSFET primarily used in power applications, including DC-DC converters, motor drivers, and power amplifiers. Its high voltage and current ratings make it suitable for switching applications in industrial equipment, automotive systems, and renewable energy systems like solar inverters. Additionally, it can be used in high-efficiency power supplies and energy management systems.

Equivalent

The IRFP3306PBF is a N-channel MOSFET. Equivalent products include the STP55NF06, FQP55N06, and APT55N06. Ensure to check specifications like voltage, current ratings, and R_DS(on) for compatibility before substituting.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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