IRFP3206PBF

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IRFP3206PBF

MOSFET N-CH 60V 120A TO247AC

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 3mOhm @ 75A, 10V
Vgs(th)(Max)@Id 4V @ 150µA
GateCharge(Qg)(Max)@Vgs 170 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 6540 pF @ 50 V
PowerDissipation(Max) 280W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Vue d'ensemble

Description

The IRFP3206PBF is a high-performance N-channel MOSFET designed for various applications, including power management, motor drives, and switching power supplies. It features a low on-resistance (R_DS(on)), high-speed switching capabilities, and a maximum drain-source voltage (V_DS) rating of 55V.
With a continuous drain current rating of up to 110A, the IRFP3206PBF is suitable for demanding applications requiring efficient power handling. Its low gate threshold voltage allows for ease of drive, making it compatible with standard logic levels.
The device is housed in a TO-220 package, which aids in effective heat dissipation, ensuring reliability and longevity in operation. The "PBF" designation signifies that the MOSFET is lead-free, adhering to environmental regulations such as RoHS.
Overall, the IRFP3206PBF is a robust choice for designers seeking efficiency and reliability in power electronic circuits.

Features

The IRFP3206PBF is a N-channel MOSFET designed for high-efficiency power switching applications. Key features include:
1. Voltage Rating: Maximum Drain-Source Voltage (V_DS) of 55V, making it suitable for medium-voltage applications.
2. Current Rating: Continuous Drain Current (I_D) of 120A, allowing it to handle substantial loads.
3. R_DS(on): Low on-resistance (typically 0.008 ohms), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: V_GS(th) ranges between 2V to 4V, enabling operation with low gate drive voltages.
5. Fast Switching: Designed for high-speed switching applications, reducing switching losses and improving thermal performance.
6. Package Type: Available in TO-220 and D2PAK packages for easy mounting and heat dissipation.
7. RoHS Compliant: Environmentally friendly with compliance to Restriction of Hazardous Substances standards.
These features make the IRFP3206PBF suitable for applications in power supplies, motor control, and DC-DC converters.

Package

The IRFP3206PBF is typically packaged in a TO-220 format. This package type features a metal tab for heat dissipation and is designed for mounting on a heatsink, allowing efficient thermal management in power applications.

Pinout

The IRFP3206PBF is a N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This is the control terminal where a voltage is applied to turn the MOSFET on or off. A positive voltage relative to the source allows current to flow from the drain to the source.

2. Drain (D): This is the terminal through which the load current flows when the MOSFET is in the on state. The drain is connected to the positive side of the load.

3. Source (S): This terminal is connected to ground or the negative side of the circuit. It is the reference point for the gate voltage and where the current exits the MOSFET.
The IRFP3206PBF is designed for high-speed switching applications and can handle high voltages and currents, making it suitable for power electronics and motor control applications.

Manufacturer

The IRFP3206PBF is manufactured by Infineon Technologies. Infineon is a global semiconductor company that specializes in providing innovative solutions in various sectors, including automotive, industrial power control, and security. The company focuses on developing high-performance semiconductor products that enhance efficiency and reliability in electronic systems. With a strong emphasis on sustainability and innovation, Infineon plays a significant role in advancing technologies such as electric mobility, renewable energy, and the Internet of Things (IoT). Its products are widely used in applications ranging from power supply systems to motor control and automotive electronics.

Application

The IRFP3206PBF is a N-channel MOSFET primarily used in applications such as power supplies, DC-DC converters, motor drives, and automotive systems. Its high efficiency and fast switching capabilities make it suitable for high-power and high-frequency applications, including renewable energy systems like solar inverters and battery management systems.

Equivalent

Equivalent products to the IRFP3206PBF include the IRF3206, STP3206, and FQP3206. These alternatives share similar specifications, such as voltage and current ratings, making them suitable substitutes in various applications. Always verify parameters like RDS(on), VGS ratings, and package type before replacing.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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