IRFP260NPBF

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IRFP260NPBF

MOSFET N-CH 200V 50A TO247AC

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 50A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 40mOhm @ 28A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 234 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4057 pF @ 25 V
PowerDissipation(Max) 300W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Vue d'ensemble

Description

The IRFP260NPBF is a N-channel MOSFET designed for high-efficiency applications. It features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 50A, making it suitable for power management and motor control tasks. This component is characterized by low on-resistance (R_DS(on)) of approximately 0.04 ohms, which helps minimize power loss during operation.
The IRFP260NPBF is designed for high-speed switching, allowing it to operate efficiently in both linear and switching applications. Its full avalanche rating, along with built-in gate protection, enhances its reliability in challenging conditions.
The MOSFET comes in a TO-220 package, making it easy to mount with appropriate heat sinks for thermal management. It is commonly used in applications such as power supplies, industrial drives, and automotive systems, where high efficiency and thermal performance are crucial. Overall, the IRFP260NPBF is a versatile and robust component suitable for a variety of electronic designs.

Features

The IRFP260NPBF is an N-channel MOSFET designed for high-efficiency power switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 60V, making it suitable for various power applications.
2. Current Rating: The continuous drain current (Id) is 50A, allowing it to handle significant load currents.
3. RDS(on): It has a low on-resistance (RDS(on)) value, typically around 0.04 ohms, which reduces power loss and improves efficiency during operation.
4. Gate Threshold Voltage (Vgs): The typical gate threshold voltage ranges from 2 to 4V, allowing for easy drive with low-voltage logic levels.
5. Package: It comes in a TO-220 package, which provides good thermal performance and is easy to mount on heatsinks.
6. Fast Switching Speed: The device supports high-speed switching, making it ideal for applications like switching power supplies, motor drivers, and DC-DC converters.
Overall, the IRFP260NPBF is a robust component for power management in electronic circuits.

Package

The IRFP260NPBF is packaged in a TO-220 form factor, which is a metal tab package commonly used for power MOSFETs. This package provides excellent thermal performance and is designed for easy mounting on heat sinks.

Pinout

The IRFP260NPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows or prevents current flow between the drain and source.

2. Drain (D): This pin is the output terminal where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative supply in typical applications. Current flows from the source to the drain when the device is activated.
The IRFP260NPBF is designed for high power applications, with a maximum drain-source voltage of 60V and a continuous drain current rating of 50A. It is commonly used in power switching, motor control, and DC-DC conversion applications.

Manufacturer

The IRFP260NPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in the production of power semiconductors, microcontrollers, sensors, and automotive electronics. Founded in 1999, the company is known for its focus on energy efficiency and smart technology solutions, serving various sectors including automotive, industrial, and consumer electronics. Infineon's products are widely used in applications such as power management, renewable energy, and electric vehicles. The IRFP260NPBF itself is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its high voltage and high current ratings, making it suitable for power switching applications.

Application

The IRFP260NPBF is a high-power MOSFET primarily used in applications such as motor control, power supplies, DC-DC converters, and audio amplifiers. It is suitable for high-frequency switching and can handle significant voltage and current, making it ideal for industrial automation, renewable energy systems, and electric vehicles. Its low on-resistance helps improve efficiency in power management systems.

Equivalent

The IRFP260NPBF is an N-channel MOSFET. Equivalent products include:
1. IRF240
2. IRF250
3. STP60NF06
4. MTP50N06
5. FQD30N06L
6. AOD7N60
Always check specific datasheets for voltage, current ratings, and package type to ensure compatibility.

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UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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