IRFP250NPBF

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IRFP250NPBF

MOSFET N-CH 200V 30A TO247AC

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 30A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 75mOhm @ 18A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 123 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2159 pF @ 25 V
PowerDissipation(Max) 214W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Vue d'ensemble

Description

The IRFP250NPBF is a high-performance N-channel MOSFET designed for applications in power management and switching. It features a high breakdown voltage of 250V, a low on-resistance (R_DS(on)) typically around 0.08 ohms, and a maximum continuous drain current of 50A, making it suitable for high-voltage power circuits. The device is capable of fast switching speeds, which enhances its efficiency in applications such as power supplies, motor drives, and inverter systems.
The IRFP250NPBF is housed in a TO-220 package, offering good thermal performance and ease of heatsinking. It operates efficiently in various environments, making it a popular choice in industrial and consumer electronics. As part of the International Rectifier's product line, it is designed to meet stringent quality and reliability standards, ensuring longevity in demanding applications. The suffix "PBF" indicates that it is lead-free, aligning with environmental compliance initiatives.

Features

The IRFP250NPBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-to-source voltage (V_DS) of 250V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) of up to 50A, allowing it to manage significant loads.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically around 0.08 ohms, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy interfacing with low-voltage control circuits.
5. Fast Switching Speed: The device provides high switching speeds, making it suitable for applications in power supplies and motor control.
6. Thermal Performance: It features a robust package design (TO-220) for effective heat dissipation.
Overall, the IRFP250NPBF is ideal for applications requiring high efficiency, reliability, and performance in power management.

Package

The IRFP250NPBF is typically packaged in a TO-220 form factor, which features three leads and is designed for heat dissipation. This package type is commonly used for power MOSFETs due to its efficient thermal performance.

Pinout

The IRFP250NPBF is an N-channel power MOSFET with a total of three pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied between the gate and source allows the device to turn on or off.

2. Drain (D) - This pin is where the load is connected. The current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply. It serves as the reference point for the gate voltage.
In summary, the IRFP250NPBF features three pins: Gate (G), Drain (D), and Source (S), functioning primarily as a switch or amplifier in various electronic applications.

Manufacturer

The IRFP250NPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Germany. Infineon specializes in a wide range of semiconductor solutions, including power semiconductors, sensors, and microcontrollers. The company serves various industries, such as automotive, industrial, and consumer electronics, focusing on energy efficiency and smart technology applications.

Application

The IRFP250NPBF is an N-channel MOSFET used in various applications, including power switching, motor control, and DC-DC converters. It is suitable for high-frequency switching in power supplies and inverters, as well as for driving inductive loads in automotive and industrial systems. Its high voltage and current ratings make it ideal for applications requiring efficient power management and thermal performance.

Equivalent

Equivalent products for the IRFP250NPBF include the IRF250, STP250N10, and IXFH30N20. Always verify specifications like voltage, current, and Rds(on) for compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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