IRFP150NPBF

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IRFP150NPBF

MOSFET N-CH 100V 42A TO247AC

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 42A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 36mOhm @ 23A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 110 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1900 pF @ 25 V
PowerDissipation(Max) 160W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Vue d'ensemble

Description

The IRFP150NPBF is an N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a high voltage rating (up to 1200V) and is capable of handling a continuous drain current of up to 34A. This makes it suitable for use in power conversion, motor control, and audio amplification systems.
Key specifications include a low on-resistance (R_DS(on)) of approximately 0.085 ohms, which minimizes power loss during operation. The device has a maximum gate-to-source voltage of ±20V and can operate across a wide temperature range, enhancing its performance in various environments.
The IRFP150NPBF is packaged in a TO-220 format, allowing for effective heat dissipation. Its robust design and high-performance characteristics make it a popular choice for engineers and designers looking for reliable power management solutions in industrial and consumer electronics applications.

Features

The IRFP150NPBF is a N-channel MOSFET with several key features:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 94A, which allows for significant power handling.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of around 0.05 ohms, ensuring efficient conduction and minimal power loss during operation.
4. Gate Charge: The gate charge (Q_g) is approximately 100 nC, allowing for faster switching speeds.
5. Package: Typically available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Thermal Resistance: It features low thermal resistance, enabling better heat management in applications.
7. Applications: Commonly used in power management, motor control, and RF amplifiers.
These characteristics make the IRFP150NPBF suitable for various high-efficiency power applications.

Package

The IRFP150NPBF is packaged in a TO-220 type package. This package features a metal tab for heat dissipation and is designed for power applications, allowing for efficient thermal management and mounting options.

Pinout

The IRFP150NPBF is a N-channel MOSFET with a total of three pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.

2. Drain (D) - This pin is where the output current flows into the MOSFET. It connects to the load and serves as the terminal for the high side of the circuit.
3. Source (S) - This pin is the terminal through which the current exits the MOSFET. It typically connects to ground or the lower potential in the circuit.
The IRFP150NPBF is designed for high-speed switching applications and can handle high voltages and currents, making it suitable for power electronics.

Manufacturer

The IRFP150NPBF is manufactured by Infineon Technologies, a global semiconductor manufacturer. Infineon is known for producing a wide range of products, including power semiconductors, microcontrollers, and sensors, primarily serving industries such as automotive, industrial, and consumer electronics. The company focuses on developing innovative solutions that enhance energy efficiency and connectivity in electronic applications. Infineon Technologies is headquartered in Neubiberg, Germany, and operates in multiple countries, emphasizing sustainability and advanced technology in its product offerings.

Application

The IRFP150NPBF is an N-channel power MOSFET primarily used in applications such as DC-DC converters, power supplies, motor control, and audio amplification. Its high voltage and current ratings make it suitable for industrial and automotive applications, including battery management systems and electric vehicles. Additionally, it can be used in inverter circuits for renewable energy systems like solar inverters.

Equivalent

Equivalent products to the IRFP150NPBF MOSFET include the IRFP150, STP150N10, and FQA11N60. Always verify specifications like voltage, current ratings, and gate threshold voltages before substitution.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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