IRFP150N

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IRFP150N

MOSFET N-CH 100V 42A TO247AC

  • Fabricant
  • Mfr. Partie #IRFP150N
  • Paquet TO-247
  • Fiche de données
  • En stock6805

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Spécifications

Package Bag
Series HEXFET®
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 42A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 36mOhm @ 23A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 110 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1900 pF @ 25 V
PowerDissipation(Max) 160W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Vue d'ensemble

Description

The IRFP150N is a high-performance N-channel power MOSFET designed for various applications, including power management, motor control, and switching power supplies. It features a low on-resistance (R_DS(on)) of approximately 0.05 ohms, which enables efficient conduction and minimal heat generation. With a high voltage rating of 100V and a continuous drain current of up to 50A, it is suitable for high-power applications.
The device is housed in a TO-220 package, providing effective thermal dissipation. Its gate threshold voltage ranges from 2V to 4V, making it compatible with low-voltage drive signals. The IRFP150N is known for its fast switching speeds, which enhance overall circuit performance and efficiency.
In summary, the IRFP150N is an ideal choice for designers seeking reliable and efficient MOSFET solutions in demanding electronic applications.

Features

The IRFP150N is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for medium voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 33A at a case temperature of 25°C.
3. Low On-Resistance: It features a low R_DS(on) of around 0.05 ohms, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy interfacing with standard logic levels.
5. Fast Switching Speed: It offers rapid switching capabilities, making it ideal for applications in power supplies, motor control, and other power electronics.
6. Package: Typically available in a TO-220 package, facilitating effective heat dissipation.
Overall, the IRFP150N is widely used in various electronic circuits due to its efficiency, robustness, and versatility.

Package

The IRFP150N is typically packaged in a TO-220 style, which features a metal tab for heat dissipation and facilitates easy mounting on heatsinks. This packaging is designed for high-power applications, ensuring efficient thermal management.

Pinout

The IRFP150N is a power MOSFET with a total of four pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.

2. Drain (D): This is the terminal through which the main current flows into the MOSFET when it is turned on.

3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground or a lower potential in a switching application.
4. Tab/Heatsink: The tab is often connected to the source and is used for heat dissipation.
The IRFP150N is commonly used in applications such as power converters, inverters, and motor drives due to its high voltage and current ratings.

Manufacturer

The IRFP150N is manufactured by Infineon Technologies, a leading global semiconductor company. Infineon specializes in providing innovative semiconductor solutions that enhance energy efficiency, mobility, and security in various applications. The company focuses on sectors such as automotive, industrial power control, and consumer electronics. Infineon Technologies is known for its high-performance products, including power semiconductors, microcontrollers, and sensors, contributing to advancements in technologies like electric vehicles and renewable energy systems.

Application

The IRFP150N is an N-channel MOSFET primarily used in power electronics applications. Its key areas include DC-DC converters, motor control circuits, power inverters, and switch-mode power supplies (SMPS). It is suitable for high-speed switching applications due to its low on-resistance and high current handling capabilities, making it ideal for audio amplifiers, industrial power supplies, and renewable energy systems like solar inverters.

Equivalent

The IRFP150N is a N-channel MOSFET. Equivalent or compatible products include:
1. IRF150
2. IRFP240
3. STP75NF75
4. FQP50N60
5. BUK95150-55
Always check specific ratings and characteristics such as voltage, current, and RDS(on) to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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