IRFP150MPBF

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IRFP150MPBF

MOSFET N-CH 100V 42A TO247AC

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 42A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 36mOhm @ 23A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 110 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1900 pF @ 25 V
PowerDissipation(Max) 160W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Vue d'ensemble

Description

The IRFP150MPBF is a high-power N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications requiring high efficiency and fast switching. It features a low on-resistance (R_DS(on)) of approximately 0.07 ohms, enabling efficient conduction with minimal heat generation. With a maximum drain-source voltage (V_DS) rating of 500V and a continuous drain current (I_D) rating of 33A at 25°C, it is suitable for power management in various applications, including industrial power supplies, motor drives, and DC-DC converters.
The IRFP150MPBF is packaged in a TO-220 form factor, facilitating easy heat dissipation and mounting. Its gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for efficient drive with standard logic levels. The device also supports high-speed switching, making it ideal for high-frequency applications. Overall, the IRFP150MPBF is a reliable choice for engineers looking to optimize power efficiency and performance in demanding electronic circuits.

Features

The IRFP150MPBF is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 50A, allowing it to handle significant load currents.
3. R_DS(on): It boasts a low on-resistance of approximately 0.08Ω at a gate-source voltage (V_GS) of 10V, which helps reduce conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, making it easy to drive with standard logic-level signals.
5. Power Dissipation: The device can dissipate up to 94W under optimal conditions, enhancing its reliability in power applications.
6. Package Type: It is typically available in a TO-220 package, facilitating effective heat dissipation.
These features make the IRFP150MPBF suitable for power management, motor control, and switching applications in various electronic devices.

Package

The IRFP150MPBF is packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation and is designed for efficient thermal management in power applications.

Pinout

The IRFP150MPBF is an N-channel MOSFET with a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the load current flows out of the device. It connects to the power supply or load.
3. Source (S): This pin is connected to the ground or negative side of the circuit. It serves as the return path for the current flowing through the drain.
4. Substrate (N): In many packages, this pin may be internally connected to the source and is often not externally used.
The IRFP150MPBF is designed for high-efficiency switching applications and is characterized by high voltage handling and low on-resistance.

Manufacturer

The IRFP150MPBF is manufactured by Infineon Technologies, a global semiconductor company headquartered in Munich, Germany. Infineon specializes in the design and production of a wide range of semiconductor solutions, including power management, automotive electronics, and security technologies. The company focuses on innovation in areas such as energy efficiency and smart mobility, catering to various industries including automotive, industrial, and consumer electronics. Infineon plays a significant role in advancing technologies for a sustainable future, emphasizing high-performance and reliable semiconductor products.

Application

The IRFP150MPBF is an N-channel MOSFET commonly used in high-power applications, including power supplies, motor control, switching regulators, and audio amplifiers. Its high voltage and current ratings make it suitable for industrial automation, renewable energy systems like solar inverters, and automotive applications. Additionally, it can be used in DC-DC converters and other electronic devices requiring efficient power management.

Equivalent

Equivalent products to the IRFP150MPBF MOSFET include the IRF150, STP150N10, and FQP150N10. These devices share similar electrical characteristics, such as voltage ratings and on-resistance, making them suitable replacements. Always verify specifications and ratings before substitution.

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UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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