IRFM120ATF

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IRFM120ATF

POWER FIELD-EFFECT TRANSISTOR, 2

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Spécifications

Supplier Rochester Electronics, LLC
Package Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 2.3A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 200mOhm @ 1.15A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 22 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 480 pF @ 25 V
PowerDissipation(Max) 2.4W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-223-4

Vue d'ensemble

Description

The IRFM120ATF is a high-performance, N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various power management applications. With a voltage rating of 120V and a current handling capability of up to 30A, it is suitable for use in switching power supplies, motor drives, and industrial equipment.
Key features include low on-resistance (RDS(on)), which enhances efficiency by minimizing power losses, and a fast switching speed that allows for higher performance in fast-switching applications. The IRFM120ATF also incorporates a robust thermal management design, enabling it to operate effectively at elevated temperatures.
Its TO-220 package ensures easy mounting and excellent heat dissipation, making it a popular choice among engineers for reliable circuit designs. Overall, the IRFM120ATF is ideal for applications requiring high efficiency, reliability, and thermal performance.

Features

The IRFM120ATF is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DSS) of 120V, making it suitable for medium to high voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at approximately 60A, allowing for significant power handling.
3. Low On-Resistance: It features a low R_DS(on) value, enhancing efficiency by reducing power loss during operation.
4. High-Speed Switching: Designed for fast switching applications, it minimizes switching losses.
5. Thermal Performance: The device has a wide operating temperature range and is housed in a TO-220 package for effective heat dissipation.
6. Applications: Commonly used in power supplies, motor control, and automotive applications.
Overall, the IRFM120ATF is ideal for designers looking for robust performance in demanding environments.

Package

The IRFM120ATF is packaged in a TO-220 form factor. This type of package is designed for power devices, providing effective heat dissipation and ease of mounting on heatsinks.

Pinout

The IRFM120ATF is an N-channel MOSFET designed for use in power applications. It typically features a 5-pin package. The pin configuration and functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET's on/off state by applying a voltage.
2. Drain (D) - The drain pin is where the load is connected; it is the terminal through which the current exits the MOSFET.
3. Source (S) - This pin is connected to ground or the negative side of the power supply; it is the terminal through which current enters the MOSFET.
4. Gate (G) - Another gate pin may be available if the device is in a configuration for specific applications.
5. Source (S) - Another source pin may exist in certain package configurations for improved thermal management.
The IRFM120ATF is commonly used in power management, switching applications, and other areas requiring efficient control of high voltage and current. Always refer to the specific datasheet for detailed pin configurations and electrical characteristics.

Manufacturer

The IRFM120ATF is manufactured by Infineon Technologies, a global leader in semiconductor solutions. Infineon specializes in providing a wide range of products for automotive, industrial power control, and security applications. The company focuses on developing innovative technologies that enhance energy efficiency, performance, and connectivity in various electronic systems. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon operates in multiple markets, including automotive, industrial, and consumer electronics, and is known for its commitment to quality and sustainability.

Application

The IRFM120ATF is a high-power MOSFET primarily used in applications such as power supplies, DC-DC converters, motor control, and automotive systems. Its features make it suitable for switching applications, amplifiers, and power management circuits, particularly where efficiency and thermal performance are critical.

Equivalent

The IRFM120ATF is a MOSFET driver, commonly replaced by equivalent products like the MIC4427, TC4420, and FAN312. For similar specifications, consider the NCP81074 or the HIP2100. Always check the datasheets for compatibility in terms of voltage, current ratings, and switching speeds.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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