IRFL4315TRPBF

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IRFL4315TRPBF

MOSFET N-CH 150V 2.6A SOT223

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 2.6A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 185mOhm @ 1.6A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 19 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 420 pF @ 25 V
PowerDissipation(Max) 2.8W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-223

Vue d'ensemble

Description

IRFL4315TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It features low on-resistance and fast switching speeds, making it suitable for use in power supplies, motor drivers, and other electronic circuits requiring reliable performance. With a maximum drain-source voltage of 55V and a continuous drain current of 40A, it can handle significant power loads while minimizing energy loss. The device is packaged in a TO-220 form factor, allowing for effective thermal management and easy integration into various designs. Its robust performance and efficiency characteristics contribute to its popularity in both commercial and industrial applications.

Features

The IRFL4315TRPBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (VDS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The MOSFET can handle a continuous drain current (ID) of up to 65A with appropriate heat sinking.
3. RDS(on): It offers a low on-resistance of approximately 0.0075Ω at a gate-source voltage (VGS) of 10V, which enhances efficiency and reduces power losses.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 1V to 2.5V, allowing for efficient drive in low-voltage circuits.
5. Package: Available in a TO-220 package, ensuring ease of heat dissipation and mounting.
6. Fast Switching: It is optimized for fast switching speeds, making it suitable for applications such as DC-DC converters, motor drives, and power management.
This combination of features enables the IRFL4315TRPBF to perform effectively in a variety of electronic circuits.

Package

The IRFL4315TRPBF is packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used for power transistors in various applications.

Pinout

The IRFL4315TRPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin allows current to flow from the drain to the source.
2. Drain (D): This pin is the output where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the lower potential in the circuit. It serves as the return path for the current flowing through the load.
The IRFL4315TRPBF is designed for high-speed switching applications, offering low on-resistance and high efficiency. It is commonly used in power supplies, motor drives, and load switching applications.

Manufacturer

The manufacturer of the IRFL4315TRPBF is Infineon Technologies. Infineon is a global semiconductor company that focuses on the development and manufacturing of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company serves various industries such as automotive, industrial, and consumer electronics. Infineon is known for its innovations in power management, automotive applications, and embedded systems, making it a key player in the semiconductor market.

Application

The IRFL4315TRPBF is a N-channel MOSFET commonly used in power management applications, including switch-mode power supplies, DC-DC converters, and motor control. Its high efficiency and low on-resistance make it suitable for automotive, industrial automation, and renewable energy systems. Additionally, it can be utilized in battery management systems and as a switching element in power inverters.

Equivalent

Equivalent products to the IRFL4315TRPBF MOSFET include the NXP PSMN1R0-30, ON Semiconductor NTMFS5C630N, and STMicroelectronics STP30NF10. Ensure to verify specifications such as voltage ratings, current capacity, and R_DS(on) for compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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