IRFIZ24GPBF

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IRFIZ24GPBF

MOSFET N-CH 60V 14A TO220-3

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Spécifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 640 pF @ 25 V
Power Dissipation (Max) 37W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3 Full Pack, Isolated Tab
Base Product Number IRFIZ24

Vue d'ensemble

Description

IRFIZ24GPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It features a maximum continuous drain current of 24A, a drain-source voltage (VDS) rating of 55V, and a low RDS(on) value, which minimizes conduction losses. This makes it suitable for switching applications in power supplies, motor drives, and other similar circuits.
The IRFIZ24GPBF is housed in a TO-220 package, ensuring good thermal performance and ease of mounting. It also includes a bootstrap capability, allowing for higher efficiency in driving inductive loads. The device is designed to operate with a wide gate-source voltage range, enhancing its versatility in different circuit configurations.
Being RoHS compliant, it adheres to environmental regulations regarding hazardous substances. Overall, the IRFIZ24GPBF is valued for its reliability, thermal performance, and efficiency in power applications.

Features

The IRFIZ24GPBF is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 55V, suitable for various applications.
2. Current Handling: Continuous drain current (I_D) of up to 24A, allowing for significant load handling.
3. R_DS(on): Low on-resistance (R_DS(on)) of approximately 0.025 ohms, reducing conduction losses and improving efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically between 1V to 2.5V, enabling easy drive from low-voltage logic.
5. Fast Switching: Capable of high-speed switching, making it ideal for high-frequency applications.
6. Package Type: Available in a TO-220 package, providing good thermal performance and ease of mounting.
7. Applications: Suitable for DC-DC converters, motor drives, and other power management systems.
These features make the IRFIZ24GPBF a versatile choice for designers seeking reliable performance in demanding environments.

Package

The IRFIZ24GPBF is packaged in a TO-220 form factor. This package type is commonly used for power MOSFETs, providing good thermal performance and ease of mounting on heat sinks.

Pinout

The IRFIZ24GPBF is an N-channel MOSFET with a total of 8 pins. The pin functions are as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output where current flows out when the MOSFET is on.
3. Source (S): The terminal through which the current enters when the MOSFET is on.
4. Body Diode (internal): Provides a path for reverse current, typically used in applications like switching power supplies.
The specific pin configuration is as follows:
1. Pin 1 - Gate
2. Pin 2 - Drain
3. Pin 3 - Source
4. Pin 4 - Source
5. Pin 5 - Drain
6. Pin 6 - Gate
7. Pin 7 - Drain
8. Pin 8 - Source
This MOSFET is designed for high-speed switching and is suitable for applications in power management and motor control. Always refer to the manufacturer’s datasheet for detailed specifications and characteristics.

Manufacturer

The IRFIZ24GPBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in providing innovative semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company focuses on power semiconductors, microcontrollers, and sensors, contributing to energy efficiency and advanced automation. Infineon is recognized for its expertise in power management and is a key player in the global semiconductor market.

Application

The IRFIZ24GPBF is an N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, motor drives, power supplies, and load switching. It is ideal for use in high-efficiency designs due to its low on-resistance and fast switching capabilities, making it suitable for renewable energy systems, electric vehicles, and industrial automation.

Equivalent

The IRFIZ24GPBF is an N-channel MOSFET. Equivalent products include the IRF240, IRF244, and STP24NM50. These alternatives offer similar voltage and current ratings, but it's essential to check specifications like RDS(on), VGS(th), and package type for a precise match in your application. Always verify compatibility with your circuit requirements.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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