IRFI3205PBF

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IRFI3205PBF

MOSFET N-CH 55V 64A TO220AB FP

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 55 V
Current-ContinuousDrain(Id)@25°C 64A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 8mOhm @ 34A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 170 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4000 pF @ 25 V
PowerDissipation(Max) 63W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB Full-Pak

Vue d'ensemble

Description

IRFI3205PBF is a high-performance N-channel MOSFET designed for various applications, including power management, switching, and amplification. It features a low on-resistance (RDS(on)), which enhances efficiency by minimizing power loss during operation. The device is capable of handling high voltage and current levels, making it suitable for use in power supplies, motor drivers, and automotive applications.
The "PBF" designation indicates that the MOSFET is lead-free and compliant with RoHS (Restriction of Hazardous Substances) regulations, making it environmentally friendly. Typically, it comes in a TO-220 or similar package, facilitating easy heat dissipation and integration into circuits.
Overall, IRFI3205PBF is a reliable choice for engineers seeking efficient and robust performance in their electronic designs.

Features

The IRFI3205PBF is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 55V, making it suitable for various power applications.
2. Current Handling: The device can handle continuous drain currents of up to 110A, ensuring robust performance in demanding environments.
3. On-State Resistance: It boasts a low Rds(on) of approximately 8 mΩ at a gate-source voltage (Vgs) of 10V, which minimizes conduction losses and improves efficiency.
4. Fast Switching: The MOSFET supports high-speed switching, enhancing the performance of converters and motor drivers.
5. Thermal Management: It features a low thermal resistance, which aids in heat dissipation, ensuring reliable operation.
6. Package Type: Typically available in TO-220 and DPAK packages, facilitating easy integration into circuits.
These characteristics make the IRFI3205PBF suitable for applications in power supplies, motor control, and DC-DC converters.

Package

The IRFI3205PBF is typically packaged in a TO-220 type package. This package type is designed for efficient heat dissipation and is commonly used in power applications.

Pinout

The IRFI3205PBF is a N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's switching. A voltage applied to this pin allows current to flow from the drain to source.
2. Drain (D): This pin serves as the output where the load is connected. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit. It serves as the return path for current flowing through the device.
4. Body (internal): The body diode is internally connected, allowing current to flow in the reverse direction when needed.
5. Tab (thermal): Typically used for heat dissipation, providing a thermal pathway to manage heat generated during operation.
This MOSFET is commonly used in power applications due to its low on-resistance and high efficiency.

Manufacturer

The IRFI3205PBF is manufactured by Infineon Technologies, a leading global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in power semiconductors, microcontrollers, and other electronic components for various applications, including automotive, industrial, and consumer electronics. The company is known for its innovation in energy efficiency and advanced semiconductor technologies, contributing significantly to the development of power management solutions and smart technologies. Infineon operates globally, serving a diverse range of industries with a focus on sustainability and performance.

Application

The IRFI3205PBF is an N-channel power MOSFET primarily used in applications such as DC-DC converters, power management systems, motor drives, and switching power supplies. Its high efficiency and low on-resistance make it suitable for high-frequency and high-current applications. It is also used in automotive, industrial, and consumer electronics for efficient power switching and amplification.

Equivalent

The IRFI3205PBF is an N-channel MOSFET. Equivalent products include the APT3205, STP3205, and FDP3205. Always check the specifications such as voltage, current ratings, and R_DS(on) to ensure compatibility for specific applications.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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